PT501 Allicdata Electronics
Allicdata Part #:

425-1017-5-ND

Manufacturer Part#:

PT501

Price: $ 0.00
Product Category:

Sensors, Transducers

Manufacturer: Sharp Microelectronics
Short Description: PHOTO TRANS CLR LEN 800NM TO-18
More Detail: Phototransistor 800nm Top View TO-18-2 Metal Can
DataSheet: PT501 datasheetPT501 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tube 
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 10mA
Current - Dark (Id) (Max): 100nA
Wavelength: 800nm
Viewing Angle: 12°
Power - Max: 75mW
Mounting Type: Through Hole
Orientation: Top View
Operating Temperature: -25°C ~ 125°C (TA)
Package / Case: TO-18-2 Metal Can
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Optical sensors are an important class of energy transduction and measurement devices. Phototransistors are a type of optical sensor used for light measurement and detection. The PT501 is a specialized phototransistor designed to detect infrared (IR) radiation.

The PT501 is an infrared-sensitive phototransistor designed to convert incoming infrared photo energy into electrical energy. It is a photo resistor-like device with a built-in power transistor and requires no external power source for operation. When light is incident on the collector surface of the PT501, the incident light will generate a current proportional to light intensity. The resulting current is internally amplified and then output as an electrical signal.

The PT501 has a wide range of application fields including infrared radiation detection, motion sensors, smoke and gas detectors, and various other types of environmental and chemical sensing systems. It is often used in smoke and fire detectors in both homes and businesses due to its high sensitivity to infrared radiation. In addition, motion sensors often utilize the PT501 for its wide sensing range. It is also commonly used for medical gas and chemical sensing.

The working principle of the PT501 is based on the conversion of incoming infrared energy into electrical energy. When infrared light is incident on the collector surface of the PT501, a small current is generated. This current is then amplified and then output as an electrical signal. The amount of current generated is proportional to the intensity of the incident light.

The PT501 phototransistor is a highly sensitive device and is often better than conventional photo resistors due to its low noise and low power consumption. It is able to detect even the smallest changes in light intensity and produces results with high accuracy and reliability. The PT501 is also designed to withstand harsh environmental conditions including extreme temperatures. The features and high sensitivity of the PT501 make it an ideal choice for use in many different industrial applications.

In summary, the PT501 is a versatile infrared phototransistor device designed for detection and measurement of infrared radiation. It can be used for a wide range of applications including smoke and fire detectors, medical gas and chemical sensing, and motion sensors. The working principle of the PT501 is based on the conversion of incoming infrared energy into electrical energy with high accuracy and reliability. The device is designed with low noise and low power consumption features making it an ideal choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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