| Allicdata Part #: | 1080-1162-ND |
| Manufacturer Part#: |
PT5529B/L2-F |
| Price: | $ 0.06 |
| Product Category: | Sensors, Transducers |
| Manufacturer: | Everlight Electronics Co Ltd |
| Short Description: | PHOTOTRANSISTOR SIDE BLACK RAD |
| More Detail: | Phototransistor 940nm Side View Radial - 3 Leads |
| DataSheet: |  PT5529B/L2-F Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.05378 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Current - Collector (Ic) (Max): | 20mA |
| Current - Dark (Id) (Max): | 100nA |
| Wavelength: | 940nm |
| Viewing Angle: | -- |
| Mounting Type: | Through Hole |
| Orientation: | Side View |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Package / Case: | Radial - 3 Leads |
Description
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PT5529B/L2-F phototransistors, developed by Toshiba Corporation, are optical sensors that can detect extremely small electromagnetic signals in the infrared spectrum. These devices are used in applications such as solar cell design and in medical instrumentation for the TV or TV/VCR tuning and imaging applications. The PT5529B/L2-F phototransistor is a versatile device designed to detect signals in the infrared spectrum. The device has a 400um active layer size and an active sensitive area of only 5% of the total surface area. In addition, the IR activity is high with a minimum cutoff wavelength at 890nm. The phototransistor also features a wide operating voltage range from 2.5V to 5.5V.The PT5529B/L2-F phototransistor can detect incoming infrared radiation and convert the electrical output signal into a voltage which is then used in an application. The photosensitive device utilizes a bias current of 0.1mA in order to collect a sufficient signal from the IR source. It is then conditioned by a preamplifier, a target amplifier, and a post amplifier in order to provide the desired output voltage.To optimize the device’s performance, the preamplifier circuit must have a low-noise input and a wide bandwidth in order to capture the full range of input signals. The target amplifier must be able to accurately match the bias of the phototransistor, and the voltage levels of the output signal must be kept within a certain range. Finally, the post amplifier must be able to maintain signal consistency regardless of external noise or other interferences. The PT5529B/L2-F phototransistor can be used in a variety of applications. Because of its high sensitivity to infrared radiation, it can be used in medical applications such as TV or TV/VCR tuning and imaging. It can also be used for solar cell design to detect and convert sunlight into electrical energy. Other applications include motion detection for security systems or lighting controls.In conclusion, the PT5529B/L2-F phototransistor is a versatile device that can detect infrared signals in the range of 890 nm. The device is easy to set up and has a wide operating voltage range of 2.5V – 5.5V. It can be used for a variety medical, solar cell, surveillance, and lighting applications.
The specific data is subject to PDF, and the above content is for reference
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