Allicdata Part #: | PT8A2611WEX-ND |
Manufacturer Part#: |
PT8A2611WEX |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | Diodes Incorporated |
Short Description: | PIR CONTROLLER |
More Detail: | N/A |
DataSheet: | PT8A2611WEX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PT8A2611WEX is a high-performance power MOSFET transistor, featuring low propagation, minimum 50V gate-source voltage, and high breakdown voltage. With its great features, it is widely used in many applications. This article looks into its application field and the working principle behind the technology.
Application Field
PT8A2611WEX power MOSFET transistor is suitable for different applications. It provides features such as improved dissipation, low gate charge, low ON-resistance and improved noise immunity. These features make it suitable for a wide range of power management solutions, including:
- Power conversion and regulation
- Uninterrupted Power Supply (UPS)
- Battery powered systems
- Bias supply and laser diode driver
- Switch mode power supply (SMPS)
All of these applications require different amounts of power management and require different types of PT8A2611WEX transistors. Depending on the application, there are different types of transistors which are available.
Working Principle
PT8A2611WEX transistors work based on the concept of gate-oxide reliability. This is a method that uses two layers of insulation to create a reliable electrical barrier between the metal gate and the channel area. The first layer consists of a very thin layer of silicon dioxide (SiO2), which is placed between the metal gate and the channel area. The second layer consists of a thicker layer of silicon nitride (Si3N4), which is applied over the first layer. The two layers form a strong electrical barrier, allowing the transistor to be used with high voltage and high frequency signals.
The transistors are also known as "high frequency, low voltage" devices because of their ability to operate with very low gate-source voltages. For example, a PT8A2611WEX transistor with a 50V gate-source voltage can switch up to 200KHz with a simple single-pole switch. These transistors are also very efficient because they do not require any additional components for operation.
PT8A2611WEX transistors are also very durable. The two layers of insulation provide strong protection against corrosion and environmental damage. They are also designed to withstand temperatures of up to 150C, which makes them ideal for applications in harsh environments.
PT8A2611WEX is a great choice for a variety of power management solutions. It has excellent features, good performance, and great durability. It is also an economical choice, as it does not require any additional components for operation.
The specific data is subject to PDF, and the above content is for reference
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