QIS4506001

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	4500V
Current - Collector (Ic) (Max):	60A
Vce(on) (Max) @ Vge, Ic:	3.9V @ 15V, 67A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	9nF @ 10V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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The QIS4506001 is a high voltage insulated gate bipolar transistor module, or IGBT module. It is employed across a wide variety of industries and applications, making it a versatile and powerful component. In this article, the application opportunities, working principles and technical aspects of the QIS4506001 will be discussed.The QIS4506001 module is a great choice for applications where high voltage and current ratings are required; their peak blocking voltage rating is 600 volts, their peak current rating is 150 amps, and their gate threshold voltage is approximately 4 volts. These features make them ideal for applications such as automotive inverters, motor drives, and renewable energy systems. Their low on-state voltage drop and low gate charging current make them desirable for applications that require high efficiency, such as solar inverters or uninterruptible power supplies (UPS).The working principle of the QIS4506001 module is based on the IGBT (insulated gate bipolar transistor) technology, which combines the features of both a power MOSFET and a bipolar transistor. It contains an N-channel power MOSFET, with an insulated gate and a PNP bipolar transistor. When the external signal is applied to the gate, the MOSFET switches on, providing low on-state resistance and allowing electrical current to flow. The PNP bipolar transistor ensures that the collector current of the MOSFET can be controlled and can be switched off quickly. The IGBT device acts as both a switch and an amplifier, capable of delivering high power with low losses and provides superior performance in efficiency compared to other power devices.The QIS4506001 has a number of technological benefits compared to traditional power devices, providing superior performance in areas such as efficiency and thermal management. Its wide operating temperature range and low switching losses aid in improved thermal management, while its low conduction losses allow for improved efficiency and power savings. Its unique dual-in-line configuration also reduces the size of the module, making it easier to integrate within a system design.The QIS4506001 has a number of features that make it highly reliable and durable. Its high-voltage isolation design ensures a high degree of safety and the module is certified to UL1577, UL1456 and EN60950-1 standards. Its rugged construction ensures a long service life, while its low input capacitance and fast switching speed result in superior system performance. Additionally, its low EMI and RFI emissions minimize interference between system components and reduce the need for extra ferrites and filters.In conclusion, the QIS4506001 module offers a range of advantages to power system design and applications. Its wide range of ratings, low losses, durability and safety features make it an ideal choice for high-power applications in areas such as solar inverters, motor drives and UPS. Its IGBT technology and low input capacitance also provide improved performance in efficiency and system response time, allowing it to meet the most demanding power management requirements.

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