Allicdata Part #: | QMP9GL512P11FFI020-ND |
Manufacturer Part#: |
QMP9GL512P11FFI020 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 24FBGA |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel ... |
DataSheet: | QMP9GL512P11FFI020 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | GL-P |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-FBGA (6x8) |
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The QMP9GL512P11FFI020 is a static random access memory (SRAM) device. It is a modern memory solution that offers high-speed data read/write performance while consuming minimal power to achieve superior performance in a variety of applications. It is intended for modern semiconductor designs that demand a fast, reliable, and low-power memory solution. By offering both single-port and dual-port configurations, the QMP9GL512P11FFI020 provides engineers the ability to select the most suitable configuration for their application. It is also available in various densities ranging from 4Mb to 64Mb.
The QMP9GL512P11FFI020 is ideal for applications that demand the highest level of performance, reliability and power efficiency. It can be used for embedded applications such as digital cameras, mobile phones, PDAs, and portable digital audio/video devices. It is also suitable for high-speed, high-temperature designs, such as mission-critical automotive, industrial and virtualization applications. Moreover, the device is capable of operating at high temperatures of up to 150°C, making it perfect for harsh environments.
The QMP9GL512P11FFI020 utilizes a unique architecture that is built with CMOS processes. This includes non-volatile, high-density circuitry to enable the device to store large amounts of data without consuming much power. The architecture provides users with high speed operation and low latency, allowing them to quickly process data without sacrificing power. Additionally, the device utilizes a dual-port flawlessly, allowing users to simultaneously read and write data without any collisions.
The working principle of the QMP9GL512P11FFI020 is the same as that of any other static random access memory (SRAM). When an address is sent to the device, the contents of that address are read or written and then the address is incremented. This process continues until all desired addresses have been accessed. The device also employs a refresh mechanism that is used to refresh the data every few milliseconds, ensuring data retention even if power were to be lost.
The QMP9GL512P11FFI020 is a reliable and powerful memory device that offers superior performance and low power consumption in applications where these qualities are crucial. With its versatile configurations and wide temperature range, it is perfect for a range of modern applications, from automotive and industrial to embedded and high-performance computing.
The specific data is subject to PDF, and the above content is for reference
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