
QSD124A4R0 Sensors, Transducers |
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Allicdata Part #: | QSD124A4R0TR-ND |
Manufacturer Part#: |
QSD124A4R0 |
Price: | $ 0.16 |
Product Category: | Sensors, Transducers |
Manufacturer: | ON Semiconductor |
Short Description: | PHOTOTRANSISTOR IR 880NM 5MM |
More Detail: | Phototransistor 880nm Top View Radial, 5mm Dia (T ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1200 +: | $ 0.15118 |
2400 +: | $ 0.13661 |
6000 +: | $ 0.12750 |
12000 +: | $ 0.12295 |
30000 +: | $ 0.12112 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | 880nm |
Viewing Angle: | 24° |
Power - Max: | 100mW |
Mounting Type: | Through Hole |
Orientation: | Top View |
Operating Temperature: | -40°C ~ 100°C (TA) |
Package / Case: | Radial, 5mm Dia (T 1 3/4) |
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Optical Sensors - Phototransistors is a subclass of optical sensor which takes advantage of the phototransistors effect to convert light into electrical signals. QSD124A4R0, a typical type of phototransistors, is a device that detects and converts ambient lighting into electrical signals, allowing devices to be controlled based on the intensity of the light.
The QSD124A4R0 phototransistor is constructed using a thinN-type base layer, P-type emitter and collector layers, and a large surface-area contact region. When light enters the contact region, it creates an energy barrier, allowing the transistors to act like a high-impedance resistor. This generates an electric current through the collector and emitter terminals, which can be further converted into a useful electrical signal.
The most common applications of the QSD124A4R0 include light-dependent resistor applications, such as measuring illumination intensity, light-dimming systems, and environmental monitoring. This type of phototransistor can also be used to detect and capture images from cameras and as a light-sensing device in industrial automation systems. It is also utilized in the telecommunication industry for RF and AF applications.
In addition, the QSD124A4R0 features a low voltage and current operation range, making it suitable for low power applications. It can operate from 0.5 to 3 volts and consumes less than10µA current. Furthermore, it has a fast response times with a transition time of 1µs. This makes it suitable for light-controlled applications that need a fast response to changing light conditions.
The working principle of the QSD124A4R0 phototransistor is based on the photoelectric effect, which states that the electric current in a material is directly proportional to the light intensity striking it. As the light intensity increases, the resistance of the phototransistor decreases, allowing more electrical current to pass through, while as the light intensity decreases the resistance increases. This creates a current-voltage relationship and allows the electrical signal to be used to control the device.
With its small size and high performance, the QSD124A4R0 is the perfect choice for a wide range of light-dependent applications, from simple illumination intensity measurements to more complex industrial automation systems. Its low voltage and current operation range and fast response time make it an ideal choice for applications that are sensitive to varying light intensities.
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