QSMS-2890-TR1G Allicdata Electronics
Allicdata Part #:

QSMS-2890-TR1G-ND

Manufacturer Part#:

QSMS-2890-TR1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY RF
More Detail: RF Diode
DataSheet: QSMS-2890-TR1G datasheetQSMS-2890-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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Diodes are active components used extensively in RF (radio frequency) applications. They are used for audio and video switching, voltage regulation, and power control. The QSMS-2890-TR1G diode is an avalanche diode designed for use in high-frequency circuits. It has the power handling capability and electrical characteristics necessary for a variety of applications.

The QSMS-2890-TR1G is a double-balanced device that employs two back-to-back diodes to minimize both static and dynamic losses. It has a low voltage drop and can handle high power levels. The diode is fabricated with advanced gallium arsenide technology and is ideal for noise suppression, frequency conversion, power distribution, and linear amplification applications.

The diode features a low thermal resistance package that dissipates the generated heat and provides wide temperature range operation. The low threshold voltage makes it ideal for light-activated switching and circuit stabilization circuits. The device also has excellent reverse leakage current characteristics and a fast reverse recovery time. This ensures that signal fidelity is maintained.

The main application of the QSMS-2890-TR1G diode is in radio frequency circuits. It is used in radio receivers, modulators, antennas, signal converters, amplifiers, signal mixers, and power dividers. The diode can be used to control the on-off function of a radio receiver, modulate the output signal of an amplifier, or perform power rectification and isolation. It is also used in amplifier biasing and high-frequency linear RF power amplifiers.

The working principle of the QSMS-2890-TR1G diode involves the process of avalanche breakdown. When a voltage higher than the device\'s avalanche breakdown voltage is applied across its terminals, a current commences to flow through the diode. This current is made up of electrons and holes that are swept together in a process called avalanche multiplication. The result is a large amount of current flow through the diode.

The QSMS-2890-TR1G diode is a versatile, high-frequency diode suitable for a wide range of RF applications. The diode is available in several package styles to meet various requirements. Its low voltage drop, low thermal resistance, and high-power capabilities make it an excellent choice for RF power amplifiers, power dividers, and signal converters.

The QSMS-2890-TR1G diode has been designed to meet the growing need for high-power and high-frequency components. It has the electrical characteristics necessary for RF applications and is suitable for a variety of applications, such as radio receivers, modulators, antennas, signal converters, and amplifiers. Its low voltage drop and low thermal resistance make the device an ideal choice for light-activated switching, power rectification, and circuit stabilization.

The specific data is subject to PDF, and the above content is for reference

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