QSMS-2890-TR2G Allicdata Electronics
Allicdata Part #:

QSMS-2890-TR2G-ND

Manufacturer Part#:

QSMS-2890-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE SCHOTTKY RF
More Detail: RF Diode
DataSheet: QSMS-2890-TR2G datasheetQSMS-2890-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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Diodes are widely used in many radio frequency (RF) applications. The QSMS-2890-TR2G diode, made by the company Quaco FSR, is a device designed for use in such applications. It is a silicon Schottky diode, which utilizes a sharp and low reverse recovery time to minimize power consumption, minimize switching times and reduce RF harmonics. It is used in many RF circuit applications where Schottky diodes are ideal.

The QSMS-2890-TR2G diode has several main characteristics, including a fast and low reverse recovery time of 0.3ns, a low capacitance of 1.2pF, and a high maximum current rating of 500mA. It has a maximum reverse voltage rating of 60V and a maximum forward voltage rating of 2V. Moreover, it has a capacitance variation of 0.2 to 1.2pF with temperature, and a maximum thermal resistance of 100K/W, which makes it suitable in various high-temperature applications.

The diode has a number of applications where the fast switching time and low power consumption is essential. It is used in radio receivers and transmitters, modulators, detectors, antenna switches, and digitally controlled oscillators, amongst others. Here, the diode acts as a high-speed switch that enables efficient transmission and reception of RF signals.

A further application of the QSMS-2890-TR2G diode is in power conversion systems, where its high thermal resistance allows for efficient thermal management and prolonged operation. It is also used in voltage-control devices, such as DC-DC converters, voltage multipliers, voltage regulators, and linear regulators.

In terms of the diode’s working principle, it utilizes a Schottky barrier. This barrier is a metal-semiconductor junction that results in low level injection of minority carriers into the depletion region of the junction. This prevents a high level of current to flow, resulting in low power consumption and minimal noise. As well, the fast turn-on and turn-off time of the diode are attributed to its metal-semiconductor contact region, allowing for efficient and rapid switching compared to that of a conventional diode.

The QSMS-2890-TR2G diode is an essential element in various RF applications due to its unique characteristics and properties. Its fast and low reverse recovery time, low capacitance and high current rating make it perfect for rapid switching and efficient power conversion. Moreover, its high thermal resistance allows it to be utilized in high temperature applications, ensuring prolonged and reliable operation. It is for these reasons that the QSMS-2890-TR2G diode is widely used in rigorous RF circuit applications, where Schottky diodes are more advantageous than standard diodes.

The specific data is subject to PDF, and the above content is for reference

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