R1RW0416DSB-2PI#D0 Allicdata Electronics
Allicdata Part #:

R1RW0416DSB-2PI#D0-ND

Manufacturer Part#:

R1RW0416DSB-2PI#D0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM Memory IC 4Mb (256K x 16) Parallel 12ns 44-T...
DataSheet: R1RW0416DSB-2PI#D0 datasheetR1RW0416DSB-2PI#D0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The R1RW0416DSB-2PI#D0 is classified as a Type of Memory. It offers a range of functions related to data storage and exchange applications. From a hardware perspective, the R1RW0416DSB-2PI#D0 is a nonvolatile memory type, meaning its contents do not vanish once powered down. It is designed with both writing and erasing capabilities, allowing users to add or delete contents conveniently.

The main applications of the R1RW0416DSB-2PI#D0 include data storage, data exchange, and instruction storage. Data storage is the primary use case, as the R1RW0416DSB-2PI#D0 can store up to 4GB of data. The memory device can store more than just data – users have the capability to store and exchange codes, such as programming languages and executable scripts. Instruction storage is another key feature of R1RW0416DSB-2PI#D0, as it is able to store assembly instructions for different computer operations.

In terms of working principle, the R1RW0416DSB-2PI#D0 works by storing digital information in the form of binary signals using silicon-oxide-nitride-oxide-silicon (SONOS) technology. This technology takes advantage of the charge storage capability of thin film stored in the nitride layer and the conduction layers above and below the nitride layer. When a voltage is applied to the cell, the conduction layers will become activated, allowing a flow of electrons in and out of the thin film.

When writing data to the device, electrons transfer through the SONOS cells to store a 0 or 1 in thenitride layer depending on the voltage being applied. The writing process can take a few seconds depending on the size of the data. When deleting data from the device, electrons will be erased from the thin film layer and the content is wiped clean. The delete process is a bit faster than the writing process and will ensure that the data stored is 100% secure.

To summarize, the R1RW0416DSB-2PI#D0 is a type of nonvolatile memory best suited for data storage, data exchange, and instruction storage applications. It is designed with writing and erasing capabilities, allowing users to conveniently add or delete contents. On a hardware level, the R1RW0416DSB-2PI#D0 utilizes the SONOS technology to store digital information in the form of binary signals. This technology takes advantage of the charge storage capability of thin film stored in the nitride layer and the conduction layers above and below the nitride layer. Overall, R1RW0416DSB-2PI#D0 is a reliable and secure solution for applications needing data or instruction storage.

The specific data is subject to PDF, and the above content is for reference

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