Allicdata Part #: | R1WV6416RSA-7SR#B0-ND |
Manufacturer Part#: |
R1WV6416RSA-7SR#B0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 64M PARALLEL 48TSOP |
More Detail: | SRAM Memory IC 64Mb (8M x 8, 4M x 16) Parallel 70... |
DataSheet: | R1WV6416RSA-7SR#B0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
R1WV6416RSA-7SR#B0 has been widely adopted in the memory application field due to its excellent performance properties. This memory device belongs to the family of DRAM or Dynamic Random Access Memory. This type of memory is a type of read-write memory that is utilized to store data that can be quickly accessed by the system.The type of R1WV6416RSA-7SR#B0 is a small, low power consuming memory that can store as much as 32GB of data. It also has an operating temperature of up to 85°C and an operating voltage of 1.5 volts. This means that it is suitable for use in a wide range of industrial, automotive, and computing applications.The device works by using a process called DRAM refresh. This process is designed to keep the memory cells active in the chip, ensuring that the data stored is not lost. The refresh process involves resetting all of the memory cells in the chip to their original values so that the data in the chip remains consistent and more accurate.The DRAM also uses a system known as pre-charging. This is a process that allows for the memory cells to be charged quickly when needed. The pre-charge process is responsible for allowing the memory cells to be processed faster, thus allowing for faster speeds during data operations.The R1WV6416RSA-7SR#B0 is capable of performing multiple operations simultaneously. This means that it can keep track of multiple tasks at the same time, allowing for improved performance in applications that require multitasking.In addition to its superior performance, the R1WV6416RSA-7SR#B0 uses a special chip architecture known as a three-level cell that helps to increase the efficiency of the memory. The architecture makes it so the memory cells are connected in a two-level, three-level and four-level configuration. This allows for higher speeds when accessing and manipulating data.The R1WV6416RSA-7SR#B0 is also power efficient. It has a very low power consumption and uses less electricity than other memory chips. This means that it is more cost efficient and can help to reduce the running costs of the system it is installed in.Overall, the R1WV6416RSA-7SR#B0 is an excellent choice for use in a variety of application fields and is a great choice for use in memories. Its high performance levels and low power consumption make it a great choice for a variety of applications. Its ability to store 32GB of data and perform multiple operations simultaneously also make it a great choice for anyone who needs reliable memory for their system.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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R1WV3216RBG-7SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48FB... |
R1WV6416RSA-7SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 64M PARALLEL 48TS... |
R1WV3216RBG-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48BG... |
R1WV3216RBG-7SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48BG... |
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