RB520CS3002LYL

The RB520CS3002LYL is a semiconductor device that belongs to diodes, specifically called Rectifiers – Single. It is a surface mount, low-forward voltage drop Schottky Barrier Rectifier with an ultra-low leakage current. This diode is suitable for a diverse range of applications such as battery management, power supply, and hot swap applications. Also, it is a high-speed diode that has a high thermal stability, high surge capability, and good reliability.

RB520CS3002LYL Package and Rating

The RB520CS3002LYL comes in SMA (Surface Mount Assembly) package and has an average balance current rating of 2.2 Amperes. It also has an auto-zero voltage of VF (Forward Voltage) which is 0.32 Volts at IF = 2.0 A, and a non-repetitive peak surge forward current rating of 10.0 Amperes. The device has a reverse voltage rating of 50.0 Volts, a normal reverse current rating of 50.0 µA, a junction temperature coefficient of 4.3 mV/ °C, and thermal resistance (junction-to-ambient) of 1500 °C/W.

RB520CS3002LYL Application Field

The RB520CS3002LYL is intended for automotive and industrial applications. This device can be used as a power supply rectifier and enables the output voltage to remain steady even with fluctuations in the input voltage. Furthermore, this product can be used for DC-to-DC converter applications and for hot-swap circuits due to its low forward voltage drop and low on-state resistance. It can also be used for laptop battery management because it has a very low leakage current and high durability, which allows it to provide stable performance for long periods of time. With its fast switching capability, it is suitable for high-current switching applications in automotive, lighting, robotics, and any other applications that require efficient and high performance rectification.

RB520CS3002LYL Working Principle

The working principle of the RB520CS3002LYL is based on the Schottky diode structure. This diode consists of a P-type semiconductor on one side, which is connected to a metal barrier on the other side. The metal barrier is made of a low work function metal such as molybdenum, titanium, or chromium. When a forward voltage is applied to this device, the electrons on the semiconductor are attracted to the metal barrier, creating a strong electric field between them. This electric field provides the device with a low-forward voltage drop, allowing it to rectify low voltage signals and current signals with a low amount of power loss.

This diode also has a low level of reverse leakage current, making it suitable for hot-swap circuits, as it can work normally despite fluctuations in the input voltage. In addition, its fast switching capability allows it to efficiently switch between a high and low current state, making it suitable for applications such as lighting control and robotics.