Allicdata Part #: | 858995-ND |
Manufacturer Part#: |
RD38F1020W0YTQ0SB93 |
Price: | $ 5.54 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intel |
Short Description: | IC FLASH RAM 32MIT PARAL 66SCSP |
More Detail: | FLASH, SRAM Memory IC 32Mbit Flash, 8Mbit RAM Para... |
DataSheet: | RD38F1020W0YTQ0SB93 Datasheet/PDF |
Quantity: | 12 |
1 +: | $ 5.03370 |
10 +: | $ 4.63302 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH, RAM |
Technology: | FLASH, SRAM |
Memory Size: | 32Mbit Flash, 8Mbit RAM |
Write Cycle Time - Word, Page: | 65ns |
Access Time: | 65ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -25°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-LFBGA, CSPBGA |
Supplier Device Package: | 66-SCSP (8x14) |
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The RD38F1020W0YTQ0SB93 is a type of memory, belonging to the non-volatile SRAM family. It is composed of a single-cell memory, featuring high speed-read operation and a decreased voltage operation. This particular type of memory offers a wide range of application fields, such as the data storage in switchgear, the measuring instrument’s memory, the automotive industry, and other general purpose applications.
The RD38F1020W0YTQ0SB93 offers a random access type of memory, with a maximum access of 2.5 MH/s. The device operates with a single-voltage operation, being able to handle load transients due to its Dynamic Write Buffer feature. When it comes to the power consumption, the device has a low active power of 4.8 mA, and a minimum standby current of 10 mA, making it an ideal choice for an Alarm System Control Panel or an Automated Meter Reading (AMR) application.
The device also offers a wide range of endurance characteristics and power cycling attributes, making it suitable for harsh conditions. The device is able to operate at temperatures ranging between -40°C to +85°C and has a maximum endurance of 10 millions write cycles. In terms of noise protection, the device is able to handle up to 15 KV ESD in Human Body Model.
The working principle of the RD38F1020W0YTQ0SB93 is that it stores data in a nonvolatile fashion. The device uses the energy stored in a ferroelectric capacitor to preserve the data, which is then read by the chip. The chip is designed to detect the difference between the ferroelectric and the usual memory cell to determine the value being stored in the cell. Once the data is stored in the cell, it will remain there until new data is written or the portion of memory is erased.
In summary, the RD38F1020W0YTQ0SB93 is a very useful memory, providing a wide array of applications and excellent performance. Thanks to its ferroelectric-based design, it provides a stable and reliable form of memory for data storage, making it ideal for a range of applications. Not only is it energy efficient, but it is also highly reliable, being able to withstand extreme temperatures and offering a maximum endurance of 10 millions write cycles.
The specific data is subject to PDF, and the above content is for reference
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