Allicdata Part #: | RD48F4400P0VBQEJ-ND |
Manufacturer Part#: |
RD48F4400P0VBQEJ |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 88SCSP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52... |
DataSheet: | RD48F4400P0VBQEJ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 100ns |
Base Part Number: | 48F4400P0 |
Supplier Device Package: | 88-SCSP (11x8) |
Package / Case: | 88-TFBGA, CSPBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TC) |
Voltage - Supply: | 1.7 V ~ 2 V |
Memory Interface: | Parallel |
Access Time: | 100ns |
Series: | Axcell™ |
Clock Frequency: | 52MHz |
Memory Size: | 512Mb (32M x 16) |
Technology: | FLASH - NOR |
Memory Format: | FLASH |
Memory Type: | Non-Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
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The RD48F4400P0VBQEJ is a type of memory chip that is used for data storage and retrieval applications. It is a high-speed, low-power SRAM that can be used for a wide variety of data processing needs. The RD48F4400P0VBQEJ is an 8K byte ferroelectric memory that features an 8-bit, 1-channel interface and a 28-pin package structure.
The RD48F4400P0VBQEJ has several primary applications in data storage and retrieval applications. First, it is used in memory intensive, large-scale applications. This includes data centers, servers, and large-scale enterprise applications. Additionally, the RD48F4400P0VBQEJ can be used in low-power, embedded applications, where a large amount of memory is necessary. Finally, the RD48F4400P0VBQEJ is also used in streaming applications, where large amounts of data need to be rapidly retrieved and processed.
The RD48F4400P0VBQEJ is a ferroelectric memory device, meaning it uses a thin film of ferro-inductive material to store data. This thin film, which contains numerous microscopic dipole magnets, stores the data in binary form. To read or write data from the memory device, a voltage is applied to the thin film, which induces a polarity change in the material. This allows for the storage and retrieval of data at a very high speed. Additionally, the device uses a proprietary software algorithm to optimize information access speed.
The RD48F4400P0VBQEJ is a high-speed, low-power memory solution. It has a low power consumption of just 6mA and an access speed of up to 33MHz. The device also has a 4-bit cycle time of 16.7ns and an internal read-write cycle time of 16.7ns. It is capable of storing up to 8K bytes of data and can sustain maximum data retention of up to 20 years.
The RD48F4400P0VBQEJ is a reliable memory solution for data storage and retrieval applications. It is ideal for applications where large amounts of data need to be accessed quickly, such as data centers, enterprise applications, and streaming applications. Additionally, due to its low power consumption and fast access speed, the RD48F4400P0VBQEJ is an ideal solution for embedded applications. Finally, due to its high data retention time, the device can be trusted to store and retrieve data reliably over long periods of time.
The specific data is subject to PDF, and the above content is for reference
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