Allicdata Part #: | RG2V-ND |
Manufacturer Part#: |
RG 2V |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE GEN PURP 400V 1.2A AXIAL |
More Detail: | Diode Standard 400V 1.2A Through Hole |
DataSheet: | RG 2V Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.18754 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.2A |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 100ns |
Current - Reverse Leakage @ Vr: | 500µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | -- |
Operating Temperature - Junction: | -40°C ~ 150°C |
Description
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Diodes - Rectifiers - Single - RG 2V Application Field and Working Principle
The RG 2V is a special type of semiconductor device and the main application of the device is in rectification processes. It belongs to the class of diodes, which can be classified as a single rectifier. This device is specially designed to provide a one-way current flow and is used in various rectification processes as it is capable of converting AC power into DC power. This device offers better performance than any other single rectifier and it is extensively used in many industrial and power electronic applications. RG 2V has two unique features, one is a low on-state voltage drop, and second is a high-current handling capacity. The first feature helps the device to handle voltages higher than standard rectifiers and the second feature helps the device to manage large amounts of current. Both these features make the device suited for applications such as AC voltage and current rectification, power conversion in energy systems, and telecom power supplies. The working principle of the RG 2V is primarily based on the PN junction effect. It is mainly constituted by a silicon substrate and two differently doped PN junction junctions. The two components form an electric potential barrier, known as a diode. When an external current is applied, the charge carriers located in the P region move across the junction towards the N region of the junction and forms a current channel. Also, the junction barrier voltage is least in these types of semiconductor devices due to which, the device is capable of operating at high currents. This lowers the losses in the device even at high voltages. As a result, the device can be used in applications, where an efficient rectification is required. Another important factor that helps the device to provide better efficiency is junction temperature. This device offers a low junction temperature, which leads to better operation and performance, as compared to other single rectifiers. The lower junction temperature results in lower forward voltage drop and improved current carrying capacity, which makes the device ideal for a wide range of power electronic applications. The RG 2V is widely used in various applications due its unique features and robust design. It is used in AC-DC converters, DC-DC converters, and power distributions systems, due to its high power handling capacity and low voltage drop. It is used in solar energy conversion, turbine power conversion, and in many other scenarios due to its low junction temperature. This device is reliable, efficient, and offers excellent performance, which makes it the ideal choice for many industrial and power needs.The specific data is subject to PDF, and the above content is for reference
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