Allicdata Part #: | RGP10G-M3/73-ND |
Manufacturer Part#: |
RGP10G-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO204AL |
More Detail: | Diode Standard 400V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | RGP10G-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, Superectifier® |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The RGP10G-M3/73 is a single rectifier diode, designed to withstand voltage of up to 10 A and peak repetitive reverse voltage of up to 1000 V. The diode is typically used in applications such as AC/DC power conversion, rectification, and in protection circuits.
A diode is a two-terminal electronic component that consists of a negative (cathode) and a positive (anode) terminal. Diodes are a type of semiconductor device, meaning they are capable of carrying both AC and DC electrical power. In a rectifier diode, the current usually only flows one way, depending on the direction of the applied electrical field.
The RGP10G-M3/73 diode uses a junction of p-type and n-type materials, referred to as a PN-junction, in order to create a structure that allows current flow through the device in only one direction. This rectifier diode is a specialized form of a PN-junction which specifically responds sensibly to AC current and only passes current in one direction. The PN junction creates an electric field within the device, forcing current to only move in one direction, meaning the rectifier diode can be used to convert AC into DC.
The PN junction of the RGP10G-M3/73 rectifier diode is made up of two different semiconductor materials; a P-type and an N-type. A P-type semiconductor is comprised of holes, or empty positions in a lattice, while the N-type material consists of electrons. The p-type material is usually made of a mixture of elements such as boron, gallium, and indium, while the n-type material is typically made of elements such as phosphorus, arsenic, and antimony. The two materials are then fused together to form a PN-junction.
In a PN-junction, the p-type semiconductor and the n-type semiconductor have an area between them known as the depletion region. In this area, free electrons from the n-type material and holes from the p-type material are attracted to each other. This creates a high resistance in the depletion region which prevents current from flowing from the p-type material to the n-type material.
The flow of current through the RGP10G-M3/73 rectifier diode is dependent on the applied voltage, with a voltage potential being applied to the anode of the diode. When a positive electric field is applied, the depletion region becomes narrower and the current passes through the device in the direction of the positive voltage. When a negative voltage is applied, the depletion region is widened, making it difficult for the current to pass through, preventing current flow.
The RGP10G-M3/73 is an efficient device for converting AC electricity into DC electricity. This may be used to charge batteries and in applications such as motor drives, power supplies, and lighting circuits. Additionally, the device is designed to protect against damage caused by overloads, as well as providing a low forward voltage drop which makes it suitable for use in applications where efficiency is important.
The diode is also used in protection circuits, as it is able to provide protection from surges, spikes, and other sudden voltages present on electrical networks. In these applications, the RGP10G-M3/73 rectifier diode acts as a deterrent for electrical current, preventing unnecessary current from entering a sensitive electronic circuit.
In conclusion, the RGP10G-M3/73 rectifier diode is a reliable device for AC to DC power conversion, rectification, and protection. The diode has a forward voltage drop of only 1 V and can withstand up to 1000 V reverse voltage, making it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RGP10J | ON Semicondu... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10M-E3/73 | Vishay Semic... | -- | 1693 | DIODE GEN PURP 1KV 1A DO2... |
RGP10M | ON Semicondu... | 0.04 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGP10B | ON Semicondu... | 0.04 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10A | ON Semicondu... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
RGP10D | ON Semicondu... | 0.04 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10M-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGP10K | ON Semicondu... | 0.04 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGP10G | ON Semicondu... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10GE-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10A-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGP10B-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10D-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10G-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10J-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10K-E3/73 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGP10A-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGP10B-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10D-E3/54 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10G-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10K-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGP10J-E3/54 | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10AHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
RGP10BEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
RGP10DEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
RGP10GEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
RGP10JEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
RGP10KEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGP10KHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
RGP10MEHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGP10MHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
RGP15BHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1.5A ... |
RGP15DHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1.5A ... |
RGP15GHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
RGP15JHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
RGP15KHE3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1.5A ... |
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