| Allicdata Part #: | RGT00TS65DGC11-ND |
| Manufacturer Part#: |
RGT00TS65DGC11 |
| Price: | $ 3.51 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | 650V 50A FIELD STOP TRENCH IGBT |
| More Detail: | IGBT Trench Field Stop 650V 85A 277W Through Hole ... |
| DataSheet: | RGT00TS65DGC11 Datasheet/PDF |
| Quantity: | 438 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 3.18780 |
| 10 +: | $ 2.84445 |
| 25 +: | $ 2.56007 |
| 100 +: | $ 2.33245 |
| 250 +: | $ 2.10491 |
| 500 +: | $ 1.88871 |
| 1000 +: | $ 1.59289 |
| Switching Energy: | -- |
| Supplier Device Package: | TO-247N |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Reverse Recovery Time (trr): | 54ns |
| Test Condition: | 400V, 50A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 42ns/137ns |
| Gate Charge: | 94nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 277W |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
| Current - Collector Pulsed (Icm): | 150A |
| Current - Collector (Ic) (Max): | 85A |
| Voltage - Collector Emitter Breakdown (Max): | 650V |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | Trench Field Stop |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
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RGT00TS65DGC11 transistors are part of the IGBT product range and are designed for applications that require a high power density with low emission. IGBTs, short for insulated gate bipolar transistors, are three-terminal devices in which a voltage applied to the gate of the transistor is used to control current flow. A gate insulated from electrodes allows separate control of the voltage and current from a single power source.
In terms of applications, RGT00TS65DGC11 devices are mainly used for power switching in motor drives and other similar industrial applications. They offer a number of advantages over conventional transistors, such as faster switching times and significantly lower power losses. They are also used in applications such as welding, and in high power motor control. In addition, the low on-state voltage drop and low gate drive voltage make them ideal for use in UPS and other power supply applications.
When it comes to the working principle of RGT00TS65DGC11 transistors, it is basically the same as other IGBTs. When the gate voltage exceeds the threshold voltage, current flows between the collector and emitter, and the transistor switches on. When the gate voltage drops below the threshold voltage, the transistor turns off. In addition, the voltage applied to the gate affects the current between the collector and emitter, allowing precise control of the current flow.
In order to get the most out of these transistors, it is important to pay attention to the maximum voltage and current ratings. RGT00TS65DGC11 devices can provide a nominal collector-emitter voltage of up to 600 volts, and can supply up to a continuous current of up to 400 amps. It is important to ensure that the voltage and current ratings are not exceeded in order to ensure reliable and safe operation.
In conclusion, RGT00TS65DGC11 transistors are part of the IGBT range and are designed for applications that require a high power density with low emission. They are mainly used for power switching in motor drives and other industrial applications and offer a number of advantages compared to conventional transistors. Lastly, when it comes to their working principle, these transistors operate similar to other IGBTs, and their maximum voltage and current ratings must be taken into account for safe and reliable operation.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RGT00TS65DGC11 | ROHM Semicon... | 3.51 $ | 438 | 650V 50A FIELD STOP TRENC... |
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RGT00TS65DGC11 Datasheet/PDF