RGT40NS65DGTL Allicdata Electronics
Allicdata Part #:

RGT40NS65DGTLTR-ND

Manufacturer Part#:

RGT40NS65DGTL

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: IGBT 650V 40A 161W TO-263S
More Detail: IGBT Trench Field Stop 650V 40A 161W Surface Mount...
DataSheet: RGT40NS65DGTL datasheetRGT40NS65DGTL Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.71267
2000 +: $ 0.66352
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Power - Max: 161W
Supplier Device Package: LPDS (TO-263S)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 58ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: 22ns/75ns
Gate Charge: 40nC
Input Type: Standard
Switching Energy: --
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The RGT40NS65DGTL is a single, silicon, insulated gate bipolar transistor (IGBT). It is used in many applications for its ability to efficiently switch large amounts of power without the need for an additional component to provide insulation. This transistor has many advantages, such as fast switching, high efficiency, and low noise.

The RGT40NS65DGTL device has a high-emission rate, which helps reduce its power consumption. Additionally, its short rise and fall times help minimize turn-on and turn-off losses. Its high-temperature operation helps to increase its reliability and durability. It also has a built-in protection against short-circuits, over-current, and over-temperature conditions.

The RGT40NS65DGTL is used primarily in power control and in high-frequency switching applications. It can be used for DC/DC conversion, incandescent lamp dimming, power supplies, motor control, high-frequency switching, and many other applications. It is also used in applications requiring low reverse recovery times and high surge current capability.

The working principle of the RGT40NS65DGTL is based on insulated gate bipolar technology. The device consists of three terminals, which are the gate, collector, and emitter. The voltage between the gate and the collector is the main control parameter, and it determines the current flow through the device. When the gate-collector voltage is above the breakdown voltage, current begins to flow in the device and the device switches on. The switching on and off of current is accomplished by controlling the gate-collector voltage.

When the transistor is in the turned on state, the emitter-collector voltage, also called the forward voltage, helps build up a power-carrying channel of electrons between the emitter and collector. This channel helps the device to switch large currents efficiently and reduces the losses in the system. The gate-emitter voltage also helps reduce the current flow when the device is in the off-state.

The RGT40NS65DGTL is a versatile and powerful single-controlled IGBT. Its wide range of applications, fast switching, and low power consumption make it a very popular choice for many industrial and consumer applications. Additionally, its built in protection features help keep the device running safely and accurately.

The specific data is subject to PDF, and the above content is for reference

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