![RGT40NS65DGTL Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | RGT40NS65DGTLTR-ND |
Manufacturer Part#: |
RGT40NS65DGTL |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | IGBT 650V 40A 161W TO-263S |
More Detail: | IGBT Trench Field Stop 650V 40A 161W Surface Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1000 +: | $ 0.71267 |
2000 +: | $ 0.66352 |
Power - Max: | 161W |
Supplier Device Package: | LPDS (TO-263S) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 58ns |
Test Condition: | 400V, 20A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 22ns/75ns |
Gate Charge: | 40nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 60A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The RGT40NS65DGTL is a single, silicon, insulated gate bipolar transistor (IGBT). It is used in many applications for its ability to efficiently switch large amounts of power without the need for an additional component to provide insulation. This transistor has many advantages, such as fast switching, high efficiency, and low noise.
The RGT40NS65DGTL device has a high-emission rate, which helps reduce its power consumption. Additionally, its short rise and fall times help minimize turn-on and turn-off losses. Its high-temperature operation helps to increase its reliability and durability. It also has a built-in protection against short-circuits, over-current, and over-temperature conditions.
The RGT40NS65DGTL is used primarily in power control and in high-frequency switching applications. It can be used for DC/DC conversion, incandescent lamp dimming, power supplies, motor control, high-frequency switching, and many other applications. It is also used in applications requiring low reverse recovery times and high surge current capability.
The working principle of the RGT40NS65DGTL is based on insulated gate bipolar technology. The device consists of three terminals, which are the gate, collector, and emitter. The voltage between the gate and the collector is the main control parameter, and it determines the current flow through the device. When the gate-collector voltage is above the breakdown voltage, current begins to flow in the device and the device switches on. The switching on and off of current is accomplished by controlling the gate-collector voltage.
When the transistor is in the turned on state, the emitter-collector voltage, also called the forward voltage, helps build up a power-carrying channel of electrons between the emitter and collector. This channel helps the device to switch large currents efficiently and reduces the losses in the system. The gate-emitter voltage also helps reduce the current flow when the device is in the off-state.
The RGT40NS65DGTL is a versatile and powerful single-controlled IGBT. Its wide range of applications, fast switching, and low power consumption make it a very popular choice for many industrial and consumer applications. Additionally, its built in protection features help keep the device running safely and accurately.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RGT40NS65DGTL | ROHM Semicon... | 0.78 $ | 1000 | IGBT 650V 40A 161W TO-263... |
RGT40TS65DGC11 | ROHM Semicon... | 2.01 $ | 289 | IGBT 650V 40A 144W TO-247... |
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