RGT50TS65DGC11 Allicdata Electronics
Allicdata Part #:

RGT50TS65DGC11-ND

Manufacturer Part#:

RGT50TS65DGC11

Price: $ 2.43
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: IGBT 650V 48A 174W TO-247N
More Detail: IGBT Trench Field Stop 650V 48A 174W Through Hole ...
DataSheet: RGT50TS65DGC11 datasheetRGT50TS65DGC11 Datasheet/PDF
Quantity: 434
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.20500
10 +: $ 1.96812
25 +: $ 1.77106
100 +: $ 1.61375
250 +: $ 1.45628
500 +: $ 1.30673
1000 +: $ 1.10206
2500 +: $ 1.04958
Stock 434Can Ship Immediately
$ 2.43
Specifications
Power - Max: 174W
Supplier Device Package: TO-247N
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 58ns
Test Condition: 400V, 25A, 10 Ohm, 15V
Td (on/off) @ 25°C: 27ns/88ns
Gate Charge: 49nC
Input Type: Standard
Switching Energy: --
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Current - Collector Pulsed (Icm): 75A
Current - Collector (Ic) (Max): 48A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The RGT50TS65DGC11 is a high-performance insulated gate bipolar transistor (IGBT) for use in high-voltage power switching applications. It is part of Renesas\' RGT series of power transistors, designed to provide high speed switching with low power consumption and low gate charge.

Features

  • Emitter-Controlled IGBT (EC-IGBT)
  • 650V Rated Voltage
  • 50A Maximum Drain Current
  • 3.3mOhms Maximum Rds(on)
  • 80ns Maximum Turn-Off Time
  • High-Speed Switching
  • Low Power Consumption
  • Low Gate Charge
  • AEC-Q101 Qualified

Applications

The RGT50TS65DGC11 is ideal for high-voltage power applications in automotive, industrial, and consumer electronics. It is often used in off-shore wind turbines, wind turbine, inverters, and solar inverters. It can also be used for power factor correction and motor control applications.

Working Principle

IGBTs are able to switch high voltages and currents with much less power than other types of transistors. The RGT50TS65DGC11 works by creating a small hole-electron cloud in the metal-oxide substrate under a gate electrode. This is achieved by applying an appropriate amount of voltage to the gate. This creates a conductive channel between the emitter and collector, allowing current to flow. As the gate voltage changes, the channel size and control the amount of current that can flow through the transistor, allowing it to switch between Low and High with relatively low power.

Conclusion

The RGT50TS65DGC11 is a high-performance IGBT for high-voltage power applications. It offers high speed switching, low power consumption, and low gate charge. The working principle of the RGT50TS65DGC11 is based on creating an electron hole cloud under the gate electrode, allowing it to switch quickly and efficiently between High and Low with relatively low power consumption.

The specific data is subject to PDF, and the above content is for reference

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