Allicdata Part #: | RGT50TS65DGC11-ND |
Manufacturer Part#: |
RGT50TS65DGC11 |
Price: | $ 2.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | IGBT 650V 48A 174W TO-247N |
More Detail: | IGBT Trench Field Stop 650V 48A 174W Through Hole ... |
DataSheet: | RGT50TS65DGC11 Datasheet/PDF |
Quantity: | 434 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.20500 |
10 +: | $ 1.96812 |
25 +: | $ 1.77106 |
100 +: | $ 1.61375 |
250 +: | $ 1.45628 |
500 +: | $ 1.30673 |
1000 +: | $ 1.10206 |
2500 +: | $ 1.04958 |
Power - Max: | 174W |
Supplier Device Package: | TO-247N |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 58ns |
Test Condition: | 400V, 25A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 27ns/88ns |
Gate Charge: | 49nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 25A |
Current - Collector Pulsed (Icm): | 75A |
Current - Collector (Ic) (Max): | 48A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The RGT50TS65DGC11 is a high-performance insulated gate bipolar transistor (IGBT) for use in high-voltage power switching applications. It is part of Renesas\' RGT series of power transistors, designed to provide high speed switching with low power consumption and low gate charge.
Features
- Emitter-Controlled IGBT (EC-IGBT)
- 650V Rated Voltage
- 50A Maximum Drain Current
- 3.3mOhms Maximum Rds(on)
- 80ns Maximum Turn-Off Time
- High-Speed Switching
- Low Power Consumption
- Low Gate Charge
- AEC-Q101 Qualified
Applications
The RGT50TS65DGC11 is ideal for high-voltage power applications in automotive, industrial, and consumer electronics. It is often used in off-shore wind turbines, wind turbine, inverters, and solar inverters. It can also be used for power factor correction and motor control applications.
Working Principle
IGBTs are able to switch high voltages and currents with much less power than other types of transistors. The RGT50TS65DGC11 works by creating a small hole-electron cloud in the metal-oxide substrate under a gate electrode. This is achieved by applying an appropriate amount of voltage to the gate. This creates a conductive channel between the emitter and collector, allowing current to flow. As the gate voltage changes, the channel size and control the amount of current that can flow through the transistor, allowing it to switch between Low and High with relatively low power.
Conclusion
The RGT50TS65DGC11 is a high-performance IGBT for high-voltage power applications. It offers high speed switching, low power consumption, and low gate charge. The working principle of the RGT50TS65DGC11 is based on creating an electron hole cloud under the gate electrode, allowing it to switch quickly and efficiently between High and Low with relatively low power consumption.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
RGT50TS65DGC11 | ROHM Semicon... | 2.43 $ | 434 | IGBT 650V 48A 174W TO-247... |
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