Allicdata Part #: | RJP4010AGE-00#P5-ND |
Manufacturer Part#: |
RJP4010AGE-00#P5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | IGBT 400V 1.6W TSOJ8 |
More Detail: | IGBT 400V 1.6W Surface Mount 8-TSOJ |
DataSheet: | RJP4010AGE-00#P5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Current - Collector Pulsed (Icm): | 150A |
Vce(on) (Max) @ Vge, Ic: | 9V @ 3V, 150A |
Power - Max: | 1.6W |
Switching Energy: | -- |
Input Type: | Standard |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOJ (0.094", 2.40mm Width) |
Supplier Device Package: | 8-TSOJ |
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RJP4010AGE-00#P5 is a popular IGBT device of the RENESAS single transistor type. It is designed for use in medium power applications. The device has a wide range of operating conditions and a variety of topologies suitable for its use. It is also a short circuit protected and highly reliable IGBT. The device is capable of providing the power required for the closest common-mode operation and its output is protected from short circuit.
The RJP4010AGE-00#P5 is designed for use in a variety of applications such as high-power switching, motor control, and rectifier systems. This device offers a outstanding ability to handle high voltage, high current without fail in typical medium-power applications. The device includes low gate charge and maximum operating temperature range of up to 125°C. Its low-emission and carrier mobility help reduce noise and minimize power dissipation. These features help RJP4010AGE-00#P5 deliver improved performance in all applications.
The RJP4010AGE-00#P5 is based on MOSFET devices with a unique gate-controlled N-channel structure. It consists of a collector channel that is formed between the source and the drain, and a semiconductor gate. The device utilizes a vertical insulated gate region. When the gate voltage increases, the current flows through the channel between the source and the drain. This current produces an effective field, which further reduces the resistance of the channel. This increase in the resistance of the channel results in a lower current.
The working principle of the RJP4010AGE-00#P5 involves applying an external voltage across the collector-emitter terminals. When a positive voltage is applied to the gate the collector voltage decreases and the collector current increases. This causes a reduction in the voltage drop across the collector-emitter terminals and an increase in the current flow across them. When the gate voltage is decreased or reversed, the opposite occurs and the collector voltage increases, resulting in a decrease in the collector current.
The RJP4010AGE-00#P5 is ideal for applications such as general purpose switching, motor control, bearing protection, and power supply in digital systems. Its high-efficiency, low-voltage, and high-current features make it suitable for a variety of applications. The device has a wide range of operating conditions and can be used in a variety of applications. Its short circuit protection and highly reliable design makes it a reliable option for medium-power applications.
The specific data is subject to PDF, and the above content is for reference
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