Allicdata Part #: | RJP5001APP-M0#T2-ND |
Manufacturer Part#: |
RJP5001APP-M0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | IGBT 500V TO-220FN |
More Detail: | IGBT 500V 45W Through Hole TO-220FL |
DataSheet: | RJP5001APP-M0#T2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 500V |
Current - Collector Pulsed (Icm): | 300A |
Vce(on) (Max) @ Vge, Ic: | 10V @ 12V, 300A |
Power - Max: | 45W |
Switching Energy: | -- |
Input Type: | Standard |
Td (on/off) @ 25°C: | 100ns/200ns |
Test Condition: | 300V, 300A, 30 Ohm, 12V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FL |
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RJP5001APP-M0#T2 is a single IGBT component from Renesas Electronics. In particular, it is a high power IGBT that is suitable for applications requiring large amounts of power, such as motor control and power conversion. In this article, we will explore the application field and working principle of this component.
RJP5001APP-M0#T2 is a high power IGBT that features a maximum operating voltage of 600V and a maximum collector-emitter voltage of 650V. It is capable of operating at up to 15A. This makes it suitable for applications that require high power, such as motor control and power conversion. Additionally, the IGBT has a low collector-emitter saturation voltage (Vce(sat)) of 1.7V at 10A, which makes it suitable for applications where low power loss is desired, such as solar power inverters and AC/DC converters.
The RJP5001APP-M0#T2 IGBT’s application field and working principle can be understood through an exploration of the component’s key characteristics. This component is an NPT (Non-Punch Through) IGBT, which means that it does not have a Punch Through (PT) region. The absence of a PT region means that this IGBT is more reliable than a PT IGBT and can operate at higher frequencies than a PT IGBT.
The working principle of the IGBT is based on the “avalanche breakdown” phenomenon. In this phenomenon, when the voltage across the IGBT exceeds a certain threshold, electrons flow through the IGBT, which produces a high current. This current then causes the IGBT to switch on and it can carry a high current with low power loss. When the voltage across the IGBT is reduced below the threshold, the IGBT switches off and the current flow stops.
In summary, the RJP5001APP-M0#T2 is a single IGBT component from Renesas Electronics that features a maximum operating voltage of 600V and a maximum collector-emitter voltage of 650V. It is capable of operating at up to 15A and features a low Vce(sat) of 1.7V at 10A. Additionally, the IGBT is an NPT IGBT and works on the principle of avalanche breakdown. Therefore, it is suitable for applications that require high power, such as motor control and power conversion.
The specific data is subject to PDF, and the above content is for reference
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