| Allicdata Part #: | RL101-N-2-4-APMS-ND |
| Manufacturer Part#: |
RL101-N-2-4-AP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE GEN PURP 50V 1A A-405 |
| More Detail: | Diode Standard 50V 1A Through Hole A-405 |
| DataSheet: | RL101-N-2-4-AP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 50V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 5µA @ 50V |
| Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | Axial, Radial Bend |
| Supplier Device Package: | A-405 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are the electronic components commonly used in the electronic circuit and electronic equipment. Among them, the rectifier diode and the single diode are the most commonly used. The RL101-N-2-4-AP diode belongs to the single diode family and is widely used for various power and radio frequency applications. In this article, we will discuss the application field and working principle of the RL101-N-2-4-AP single diode.
RL101-N-2-4-AP single diode mainly used in power and radio frequency applications. Firstly, the diode can be used in the rectification field. A common application of it is a full-wave rectifier circuit, where the diode is commonly used to construct a bridge rectifier circuit. The bridge rectifier circuit receives a sinusoidal input voltage and outputs a rectified voltage suitable for regulating power supply devices. It also can be used in high frequency powered devices, such as TV and other equipment.
The RL101-N-2-4-AP single diode has a maximum reverse voltage of 20V and the maximum rated current is 200mA. The diode has a low forward voltage drop of 0.33V, which eliminates the requirement of an additional voltage drop before it can operate. This feature makes it an ideal choice for radio frequency applications where the power output is limited. In addition, this diode can be used in pulse circuits, as it has a variety of breakdown characteristics including temperature coefficient, rise time and fall time. These characteristics make this diode suitable for producing high energy pulses in power control systems.
The working principle of the RL101-N-2-4-AP single diode is based on the PN junction principle. The PN junction consists of two layers of semiconductor materials. When a positive voltage is applied to one of the layers, it results in a current flow. This current flow is known as the forward bias current. When a negative voltage is applied, the current flow stops and it is called the reverse bias current. The single diode can be connected in such a way that the current flows through it in the forward bias state and it can also be connected in such a way that the current flow is blocked in the reverse bias state.
In conclusion, the RL101-N-2-4-AP single diode is a useful device for a wide range of applications, especially in the field of power and radio frequency applications. It has unique characteristics such as low forward voltage drop and high energy pulse capability. It is suitable for controlling power output and producing high frequency pulsed signals in power control systems. Also the working principle of the diode is based on the PN junction principle, which provides the basis for controlling the current flow in the forward and reverse bias states.
The specific data is subject to PDF, and the above content is for reference
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RL101-N-2-4-AP Datasheet/PDF