Allicdata Part #: | RM11A-ND |
Manufacturer Part#: |
RM 11A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | DIODE GEN PURP 600V 1.2A AXIAL |
More Detail: | Diode Standard 600V 1.2A Through Hole Axial |
DataSheet: | RM 11A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.2A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1.5A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -40°C ~ 150°C |
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The RM 11A is a type of single rectifier diode. It is a semiconductor device which can conduct current in only one direction, allowing reversed biased current but not forward biasing. This diode is designed to be particularly robust, with a maximum power dissipation of 1W and an average junction temperature at maximum power ratings of 125 degrees Celsius. It is commonly used in applications that require high power and high frequency switching. Its common applications include rectifying AC to DC for power supplies, voltage clamping, and high frequency switching.
The RM 11A is composed of two main parts, an anode and a cathode. The anode is the positive terminal of the diode and is connected to the power source, while the cathode is the negative terminal of the diode and is connected to the load. A single diode has only one anode and one cathode, while multiple diodes, such as in a bridge rectifier, will contain multiple anodes and cathodes. In RM 11A devices, the anode is usually a P-type silicon semiconductor material and the cathode is usually an N-type silicon semiconductor material.
When a forward bias voltage is applied, electrons in the N-type material will be attracted to the P-type material and will form a depletion layer, which has a higher resistance than the original P-type material and N-type material. The current is then said to be “rectified”, resulting in a unidirectional flow with the electrons flowing from the N-type material to the P-type material. The current flow is broken when a reverse bias voltage is applied, as the depletion layer increases in resistance and inhibits the electron flow from N-type material to P-type material.
The main feature of the RM 11A diode is its high power ratings and high frequency switching capabilities. The diode has the ability to switch on very quickly and with high accuracy, making it ideal for use in switching power supplies and other electronic circuits. Additionally, the power ratings of this diode make it suitable for applications with higher power requirements, such as resistive loads and other high power applications. It is also capable of handling power surge spikes, making it well suited for use in rectifier circuits as a voltage clamping element.
Overall, the RM 11A is a useful and reliable single rectifier diode. Its high power ratings and fast switching capabilities make it suitable for many different applications, including power supplies, voltage clamping, and high frequency switching. Because it is a single rectifier diode, it can also be used in a bridge rectifier. Its robust design and increased power dissipation also ensure that it can handle higher power requirements and power surge spikes.
The specific data is subject to PDF, and the above content is for reference
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