RM 1BV Allicdata Electronics
Allicdata Part #:

RM1BV-ND

Manufacturer Part#:

RM 1BV

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: DIODE GEN PURP 800V 800MA AXIAL
More Detail: Diode Standard 800V 800mA Through Hole Axial
DataSheet: RM 1BV datasheetRM 1BV Datasheet/PDF
Quantity: 1000
9000 +: $ 0.14288
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Description

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Single rectifier diodes are commonly found in power electronics and are known for their versatile functions in applications such as voltage or current regulation, balancing, rectification and conversion. This article will discuss the application field of single rectifier diodes, specifically the “RM-1BV” Type, and its working principle. The “RM-1BV” is identified as an ultra-fast switching diode.

The “RM-1BV” Type is ideal for most general power switching applications, such as rectification, voltage division and pulse generation. The Type is typically used in high-speed systems, with a reverse recovery time small enough to allow it to use in high frequency applications (around 10kHz). As such, its application field can include inverters, voltage sources, motor control, DC/DC converters, high-speed gate drives and AC/DC rectification.

In addition, the “RM-1BV” Type’s wide range of features make it well-suited for other applications such as low-voltage AC/DC rectification, low-voltage DC/DC conversion, rapid temperature rise and fast reverse-bias switching. Its low on-state voltage drop, low leakage current and low input capacitance, as well as its light-load efficiency, make it ideal for use in switching mode power supplies.

The working principle of the “RM-1BV” Type can be described as follows. When current flows through the diode, a field called the “forward bias” is created across the diode. This field enables the diode to conduct and thus allows current to flow through it. When the diode is reversed biased, the electron and hole carriers are drawn away from the junction and current does not flow through the diode.

The “RM-1BV” is an ultra-fast switching diode and has a very fast recovery time. This means that when the diode is reverse biased, the electrons and holes carriers return to their original position very quickly and the diode can quickly switch back to its conducting state. This is one of the reasons why it is ideal for use in high frequency applications.

Overall, the “RM-1BV” Type single rectifier diodes can be used in a variety of power applications, making them extremely versatile. Their fast recovery time allows them to be used in high frequency applications, making them suitable for inverters, voltage sources, motor control, DC/DC converters and high-speed gate drives.

The specific data is subject to PDF, and the above content is for reference

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