RYC8630-1M Allicdata Electronics
Allicdata Part #:

RYC8630-1M-ND

Manufacturer Part#:

RYC8630-1M

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Littelfuse Inc.
Short Description: IC PWR SWITCH PROT DUAL 8-SOIC
More Detail: N/A
DataSheet: RYC8630-1M datasheetRYC8630-1M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Switch Type: USB Switch
Number of Outputs: 2
Ratio - Input:Output: 1:2
Output Configuration: High Side
Output Type: --
Interface: On/Off
Voltage - Load: 3 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.1A
Rds On (Typ): 100 mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled, Status Flag
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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Power Metal-Oxide Semiconductor Field-Effect Transistors (Power MOSFETs) are important components used in a wide array of electronic applications, including power distribution, load drivers, and more. The RYC8630-1M is a Power Metal-Oxide Semiconductor Field-Effect Transistor (Power MOSFET) produced by Ricoh that allows for high current in a small footprint. With a capability of up to 70A at 25 degrees Celsius, the RYC8630-1M has been found to be optimized for high current applications in computer systems and consumer electronics.

The RYC8630-1M is optimized for application fields including power distribution switches, load drivers, and other power-sensitive applications where space is a priority. This MOSFET can be used to replace other types of power MOSFETs, allowing for maximum efficiency within a small footprint. The RYC8630-1M when used for power distribution can provide up to 70A of current with a power dissipation as low as 0.75 watts, making it ideal for applications such as computers and other consumer electronics.

The RYC8630-1M operates within a wide range of temperatures, making it suitable for a variety of applications. It has a continuous-drain current rating of 70A and a pulsed current rating of 250A. The RYC8630-1M also features an ultra-low on-resistance of 0.006 ohms, providing excellent thermal performance. The MOSFET can also switch at approximately 4 nanoseconds, making it suitable for high-speed applications.

The RYC8630-1M also incorporates several safety measures, such as an integrated power limiter, thermal shutdown, and ramp compensation. These features ensure that the MOSFET is protected from over current and short circuit conditions. The RYC8630-1M also features a built-in circuit breaker that prevents damage due to excess current.

In addition to its impressive electrical characteristics, the RYC8630-1M is designed to work with a variety of other components, including bipolar transistors, capacitors, and resistors. This makes the MOSFET ideal for applications where multiple components are needed to complete a circuit.

Overall, the RYC8630-1M is a powerful and versatile MOSFET that can be used in a variety of applications involving power distribution, load drivers, and other power-sensitive applications. It is designed with a focus on providing maximum efficiency within a small footprint and features several safety mechanisms to ensure the device is protected from excess current and short circuit conditions.

The specific data is subject to PDF, and the above content is for reference

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