S1A-13-F Discrete Semiconductor Products |
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Allicdata Part #: | S1A-FDITR-ND |
Manufacturer Part#: |
S1A-13-F |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 50V 1A SMA |
More Detail: | Diode Standard 50V 1A Surface Mount SMA |
DataSheet: | S1A-13-F Datasheet/PDF |
Quantity: | 460000 |
5000 +: | $ 0.02495 |
10000 +: | $ 0.02121 |
25000 +: | $ 0.01996 |
50000 +: | $ 0.01871 |
125000 +: | $ 0.01622 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | S1A |
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A S1A-13-F diode is a single- phase silicon rectifier, widely used in power supplies, battery chargers and other power electronics applications. It is commonly used as an efficient way to turn alternating current (AC) into direct current (DC).
The S1A-13-F is constructed of a single silicon junction. This junction is formed by two layers of silicon. The lower layer - the anode - is very lightly doped, while the upper layer - the cathode - is heavily doped. This creates a P-N junction between the two layers. As an AC voltage is applied across the diode, electrons from the negative layer will cross the junction and flow towards the positive layer. This conduces an electrical current in the form of direct current (DC).
The S1A-13-F is designed to have a peak reverse voltage of 13V. This means that it will not conduct when a voltage is applied across the diode in the reverse direction. This helps to protect circuits from damage due to electrical spikes. It also allows for the diode to be used in multiple circuits, as it can be used in a wide range of applications, depending on the need.
The working principle of the S1A-13-F diode can be explained with the help of two phenomena: forward biased and reverse biased. When a forward bias is applied, the applied voltage is larger than the barrier potential required for current flow. In this case, the electrons can easily cross the junction and conduct an electrical current. However, when a reverse bias is applied, the electrons are not able to cross the junction due to the depletion region that is generated due to the high voltage. This prevents any current from flowing.
The S1A-13-F diode can be used in a wide range of applications in both low power and high power systems. This includes power supplies, motor controls, battery chargers, and many other electronic circuits. It is often used in power supplies for rectification, meaning it turns AC voltage into DC. Additionally, it can be used for protection, due to its reverse voltage capability, and for temperature control, due to its temperature range.
The specific data is subject to PDF, and the above content is for reference
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