Allicdata Part #: | S1AFM-M3/6B-ND |
Manufacturer Part#: |
S1AFM-M3/6B |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1KV 1A DO221AC |
More Detail: | Diode Standard 1000V 1A Surface Mount DO-221AC (Sl... |
DataSheet: | S1AFM-M3/6B Datasheet/PDF |
Quantity: | 1000 |
14000 +: | $ 0.05332 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.47µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 7.9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-221AC, SMA Flat Leads |
Supplier Device Package: | DO-221AC (SlimSMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes, such as the S1AFM-M3/6B, are the most common of all semiconductor devices in electronics. They are used to control current flow, with two possible directions. One of the uses of a diode is in a rectifier circuit, which converts alternating current (AC) to direct current (DC).
The S1AFM-M3/6B diode is a single anode Schottky rectifier configured with a metal-semiconductor junction and an insulated gate. This type of diode is suitable for a wide range of applications, including high frequency switching, high-efficiency power supplies, voltage regulation, and more. It features ultra-low leakage and low-series resistance, making it an ideal choice for all kinds of electronic applications.
The metal-semiconductor junction that the S1AFM-M3/6B diode uses allows more current to flow in one direction than the other, which can be achieved through the use of negative resistance, because the voltage applied to the junction causes a current to flow through it. This type of diode is known as a Schottky diode. The gate of a Schottky diode is insulated from the junction to prevent it from being affected by the electric field around it, allowing the diode to be mass produced easily.
The S1AFM-M3/6B can be used in a wide range of applications due to its high-efficiency capability, low gate threshold voltage, and low dissipation. Its application fields include automotive electronics, motor control, lighting control, consumer electronics, and more. Additionally, due to its low capacitance, it can be used in devices with high frequency live switching, such as rectifiers, converters, voltage regulators, and more.
The working principle of the S1AFM-M3/6B is based on the flow of current through the diode due to the voltage applied to the junction. When voltage is applied to the junction, current can flow from anode to cathode, allowing a rectification process to take place. This process is referred to as reversed biased or forward biased. When the voltage is higher on the anode than on the cathode, a reverse bias is established which allows the diode to conduct current in the reverse direction. When the voltage is higher on the cathode than on the anode, a forward bias is established allowing current to flow from the cathode to the anode. Reverse biasing results in blocking of current flow, while forward biasing facilitates current flow.
The S1AFM-M3/6B has become an essential component of electronic circuits due to its wide range of applications and its ease of use. It can be used in devices with high frequency live switching, such as rectifiers, converters, and voltage regulators. Additionally, it can also be used for automotive electronics, motor control, lighting control, and more. It is highly reliable, featuring ultra-low leakage and low-series resistance, making it an ideal choice for most electronic applications.
The specific data is subject to PDF, and the above content is for reference
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