Allicdata Part #: | S1B-TP-ND |
Manufacturer Part#: |
S1B-TP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 100V 1A DO214AA |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AA, HSM... |
DataSheet: | S1B-TP Datasheet/PDF |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA, HSMB |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Introduction
S1B-TP diode, also known as Schottky barrier diodes, is a type of semiconductor created in the late 1960s. It is a specialized metal-to-semiconductor junction that is considered a significant device in modern electronics. The unique properties of S1B-TP help diodes to be used in a wide range of applications, from switching and power control to rectifying and more.
Application Field
Due to their inherently high current gain, S1B-TP diodes are widely used in consumer and industrial electronics for various applications. They are commonly used in switching power rapid cycles, low power and high power switches, voltage regulators and similar control circuits. Additionally, S1B-TP diodes are used in high power resonant converters and other high power applications. Furthermore, single S1B-TP diodes are suitable for rectifying and clippers in electronic circuits.
Working Principle
S1B-TP diodes work by allowing an electric current to pass only in one direction. This is due to their metal-to-semiconductor contact, which has a much lower threshold voltage than a traditional semiconductor diode. The current gain is due to the fact that the metal-to-semiconductor contact of the S1B-TP reduces the effective barrier voltage, which can range from 0.45 volts to 0.7 volts.
In order to use an S1B-TP diode, it must be connected with a power supply to the diode’s terminals. The circuit then allows a small current in the forward direction, while the reverse current is blocked. This is due to the current-blocking effect of the Schottky barrier and the large voltage difference between the diode junction and the other side of the diode.
Conclusion
S1B-TP diodes are an indispensable part of modern electronics. They are used for a wide range of applications, from switching and power control to rectifying and more. Additionally, the high current gain of S1B-TP diodes is due to the fact that the metal-to-semiconductor contact of the diode reduces the effective barrier voltage. With their unique properties and capabilities, S1B-TP is indeed the ideal device to use in modern electronics.
The specific data is subject to PDF, and the above content is for reference
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