S1G-13-F

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 1A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	3µs
Current - Reverse Leakage @ Vr:	5µA @ 400V
Capacitance @ Vr, F:	10pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	SMA
Operating Temperature - Junction:	-65°C ~ 150°C
Base Part Number:	S1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S1G-13-F is a rectifier diode that is used in a variety of electronic applications. This type of diode is commonly used in power electronics such as voltage regulators, power filters and power supplies. It has a large peak surge current, low forward voltage drop, and is small and surface mountable, making it ideal for use in high power applications.The purpose of the S1G-13-F diode is to allow current to flow in one direction only. It does this by allowing electrons to flow freely through the diode, while creating a physical barrier to prevent the flow of electrons in the opposite direction. This ensures that current only flows in the predetermined direction, thus preventing any damage to the electronic circuit it is protecting.The S1G-13-F diode features a number of characteristics that make it exceptionally suitable for use in a variety of applications. Most notably, it has a high peak surge current rating of up to 10 amperes and a low forward voltage drop of 0.65 volts. Additionally, the diode is small and can be surface-mounted, making it an ideal choice for applications where space is at a premium.When the S1G-13-F diode is in its forward-biased state, the diode will pass an electric current through it. This occurs due to the electrical energy that is generated when the electrons accelerate and move through the diode\'s P-N junction. In a P-N junction, the positively charged atoms of the P-type material are attracted to the negatively charged atoms of the N-type material. This forms an electrical junction between the two materials, which allows the current to flow.However, when the S1G-13-F diode is in its reverse-biased state, the P-N junction will effectively block the current from flowing. This is because the electrical force that is normally present within the P-N junction is reversed, causing the atoms of the P-type material to become repellent to the atoms of the N-type material. As a result, the electrical junction that is formed between the two materials is blocked, preventing electrons from flowing.The S1G-13-F diode is an invaluable tool for engineers designing high power electronics circuits. Its ability to block current flow in the reverse direction makes it well suited for use in power filters, voltage regulators and power supplies, providing much needed protection for the device it is attached to. Additionally, the diode\'s small size and surface mountable properties allows it to be used in applications that have limited space.

The specific data is subject to PDF, and the above content is for reference