S1G-E3/61T Discrete Semiconductor Products

S1G-E3/61T is a single diode rectifier, which is two-level unidirectional PN junction circuitry and has high stability, fast recovery time and high avalanche capability. It provides extremely efficient power dissipation in applications such as switched mode power supplies, converters, free wheeling diodes, speed controllers, automotive or industrial applications etc.

S1G-E3/61T offers very low forward voltage drop characteristics ensuring excellent temperature stability and enhanced efficiency of the power supply. It is available in a wide choice of low typical IR values from 0.38 to 3.2 Ω, and in a range of maximum power rating from 60 W to 1250 W as per the customer requirement. All the components packaged in various package several packages including Power DO-201AD, TO-220AB, H2PAK, H2PAK-5, TO-100AB, etc.

Application field of S1G-E3/61T

S1G-E3/61T are frequently used in applications where high power is required. It can provide 1250 watt average power *derating according to the ambiance temperature. The S1G-E3/61T will offer significant power savings, reliability and long-term performance. The applications include AC/DC converter, inverters, uninterruptible power supplies, UPS, CFL, induction heating, renewable energy systems, solar, wind turbine, etc. It is also used in switches, blocking diodes, power factor correction, power regeneration and 3φ bridge rectifier.

Working principle of S1G-E3/61T

The working principle of S1G-E3/61T is based on PN junction diode as it is composed of two P-type and N-type semiconductor materials. In one of the two terminals, the majority of the charge carriers are in the form of holes while in the other terminal, the majority of the charge carriers are in the form of electrons which are the majority carriers.When the anode is having a higher voltage than the cathode, the diode will be forward biased and it will start conducting current. When this bias is reversed and the cathode has higher voltage, the diode will be in reverse bias and the current will cease to flow. This is due to the fact that the electric field created in the junction will act against the carriers trying to cross the junction. The S1G-E3/61T will have a reverse voltage, breakdown voltage of 200V which makes it suitable for high voltage, high frequency device applications.

The S1G-E3/61T also features a low reverse recovery time, which provides ultra-fast switching and higher efficiencies. This is due to the fact that the diode begins to charge as soon as it turns off and the stored charges move back to their original states quickly. This makes for a perfect device for high-frequency, high-efficiency and low-power applications.

Conclusion

In conclusion, S1G-E3/61T is an excellent single diode rectifier which is perfect for applications requiring high power, low conduction loss, high switching frequency and low reverse recovery time. It offers excellent temperature stability and has a wide range of versions and packages to suit different needs. It is suitable for applications such as AC/DC converters, inverters, uninterruptible power supplies, renewable energy systems and free-wheeling diodes, etc.