S1G-TP

A Silicon Carbide Schottky diode (or S1G-TP) is a semiconductor device made from a 4H-SiC material system comprising gallium, thallium and phosphorus. It is designed to operate at high temperature, with a maximum operating temperature of up to 250°C. The diode has a low forward voltage drop and low leakage current, both of which make it suitable for high temperature applications. Additionally, it also offers a wide reverse voltage range, since it can operate in reverse bias between -50 and +250V.

The Silicon Carbide Schottky diode structure is a p+-n+ imbedded type with an ohmic anode contact. Anodes are typically connected to a brass clip which is then attached to the heat sinks. The cathode contact is achieved by punch-through of the epitaxial layer. The S1G-TP Schottky diode is then characterized by the following key features: low leakage current, great reverse voltage range, low forward voltage drop, 200 V or higher blocking capability and easy to mount.

The two basic applications of Silicon Carbide Schottky diodes are in high temperature switches and circuit protection. They are used as anti-parallel devices in a high temperature switching mechanism, and they are also used as input protection in high temperature sensing circuitry. Moreover, they offer a more practical solution where high temperature switches require easy mounting, since the S1G-TP Schottky diode is simpler to mount (with a standard socket) than traditional diode products.

In terms of the working principle, Silicon Carbide Schottky diodes usually conduct current in the forward direction and block current when it travels in the reverse direction. When forward biased, the semiconductor junction provides low resistance , allowing electric current to flow through the junction. This is because when the junction is forward biased, minority carriers (electrons in the case of p-type) are pushed across the alloyed junction, inducing a lower resistance path for the current to flow. In the reverse biased state, a high resistance is present at the semiconductor junction. This is because the reverse voltage applied forces the depletion layer to widen and increase its electric field, leading to a high resistance condition.

The Silicon Carbide Schottky diode is ideal for applications where an efficient, reliable, and cost-effective solution is needed. Its low forward voltage drop and low leakage current make it an excellent choice for high temperature applications, while its wide reverse voltage range allows it to operate at a wide range of reverse bias voltages. Additionally, its ease of mounting makes it a great choice for circuit protection and high temperature switching applications.