Allicdata Part #: | S1J-LTP-ND |
Manufacturer Part#: |
S1J-LTP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 600V 1A DO214AA |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AA (SMB... |
DataSheet: | S1J-LTP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03804 |
Series: | -- |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are an integral part of electronics and have been used in all sorts of applications since their invention. Single diodes, in particular, have become a mainstay in industrial, automotive and aerospace applications. One such diode, the S1J-LTP, is an ultra-high performance, ultra-low-power diode with a wide range of applications.
The S1J-LTP diode is a high-frequency single-phase bridge rectifier designed for high-power and ultra-low-power applications. It is designed to minimize power consumption while providing high levels of linearity and performance. The S1J-LTP also has a very fast switching speed, allowing it to be used in high-frequency applications such as microwave systems. In addition, it has a low reverse leakage current, making it suitable for low voltage applications.
The S1J-LTP is a great choice for any application that requires high-power, low-voltage performance. The diodes are highly reliable and provide excellent linearity throughout their operating range. Additionally, their fast switching speed allows for high current operation with minimal power loss. As such, the S1J-LTP is well-suited for motor control applications, automotive engine control applications and solar energy systems.
The working principle of the S1J-LTP diode is fairly simple. The device has two electrodes, the anode and the cathode, as well as a junction region between them. When a voltage is applied to the device, electrons in the anode region move towards the cathode region. As they move, they create a region of electrical imbalance known as a depletion layer. This layer acts as a barrier and prevents any further electron flow through the diode.
The S1J-LTP diode is also a good choice for applications that require high-power with low voltage. The diodes have a low voltage drop, which is useful when using low voltages, and a high current carrying capacity. The device also operates at an extremely high frequency and has a fast switching time, making it ideal for microwave applications. Additionally, the S1J-LTP’s low reverse leakage current means it is suitable for use in low voltage applications.
In summary, the S1J-LTP diode is an excellent choice for high-power and low-voltage applications. It is a reliable and highly efficient single-phase bridge rectifier with a wide range of applications. Its fast switching speed and low reverse leakage current mean that it can be used in both high-frequency and low voltage applications. As such, the S1J-LTP can be used in any application that requires high-frequency, high-power and low-voltage performance.
The specific data is subject to PDF, and the above content is for reference
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