S1J-M3/5AT Allicdata Electronics
Allicdata Part #:

S1J-M3/5AT-ND

Manufacturer Part#:

S1J-M3/5AT

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GPP 1A 600V DO-214AC
More Detail: Diode Standard 600V 1A Surface Mount DO-214AC (SMA...
DataSheet: S1J-M3/5AT datasheetS1J-M3/5AT Datasheet/PDF
Quantity: 1000
30000 +: $ 0.03056
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes are electrical components that conduct current in one direction and block current from flowing in the opposite direction. A rectifier diode is a diode that converts alternating current (AC) input into direct current (DC) output. Single die rectifier diodes are a type of rectifier diode composed of a single electron-hole PN junction. The S1J-M3/5AT is an ultra-fast, soft recovery single rectifier diode with a reverse voltage of 5A and a peak repetitive reverse voltage of 600V. This product is used in a variety of applications such as voltage clamping and switching circuits, telecommunication DC/DC converters, power supplies, and more.

The basic operation of the S1J-M3/5AT is based on the PN junction diode’s rectifying effect. When a forward voltage is applied to the device, holes in the p-type region cross into the n-type region, creating a flow of positive charges for the current flow. In contrast when the voltage reverses and a reverse voltage is applied to the device, there is a barrier between the p-type and n-type regions such that there is no further current flow. By regulating the amount of power available to the diode, the current flow can be controlled and the device will act accordingly.

The S1J-M3/5AT is designed for ultra-fast switching applications as well as low loss power conversion. It has a peak reverse recovery time of 20ns and a forward voltage drop of 0.47V with mean time to failure (MTTF) of 125,000 hours. The junction temperature range of -55 to +150 Celsius makes it suitable for use in LED lighting and other high temperature applications. The diode has a typial thermal resistance of 0.60ºC/W and a storage temperature range of -25 to +125 Celsius.

The S1J-M3/5AT is suitable for many applications such as switching regulators, lighting fixtures, power supplies, DC/DC converters, solar panels, and more. It is used to protect circuits from overvoltage/overload, to reduce voltage ripple, and to provide better power conversion performance. It is also used in LED lighting systems to control current flow and protect LED chips from permanent damage. It is designed to handle high switching frequency, high current load and high energy dissipation.

The S1J-M3/5AT is simple to use and easy to implement within circuits and systems. It is a reliable and cost efficient solution for high power applications. This product is manufactured to provide superior performance and reliability, making it an ideal choice for a wide range of applications. Whether used as a voltage regulator, power conversion element, light source, or current control in a complex circuit, the S1J-M3/5AT is a great choice.

The specific data is subject to PDF, and the above content is for reference

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