S1K-M3/5AT Allicdata Electronics
Allicdata Part #:

S1K-M3/5AT-ND

Manufacturer Part#:

S1K-M3/5AT

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GPP 1A 800V DO-214AC
More Detail: Diode Standard 800V 1A Surface Mount DO-214AC (SMA...
DataSheet: S1K-M3/5AT datasheetS1K-M3/5AT Datasheet/PDF
Quantity: 1000
30000 +: $ 0.03056
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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A single-phase silicon rectifier diode with a max blocking voltage of up to 1000V (1KV) is the S1K-M3/5AT. This diode is used in various electrical applications such as switching, lighting control, and power conditioning applications. As with other rectifier diodes, the S1K-M3/5AT can be used to convert alternating current into direct current by allowing current to flow in one direction.

The S1K-M3/5AT is a compact, metal-oxide semiconductor (MOS) device, which has a low forward voltage drop and is designed for use in rectifying a wide range of higher power voltages. While it is designed to have a peak blocking power of 1000 volts, the device has a maximum reverse voltage rating of around 500V when a 1A current flow is applied and an average repetitive reverse peak voltage of 700 volts in a 1A surge. While the average rectangular non-repetitive peak voltage is stated as 800V.

The forward voltage drop of the S1K-M3/5AT is the voltage that is accumulated when the device is conducting in its forward direction. This voltage is typically around 1.1V at room temperature, with a temperature coefficient of 0.2V per degree Celsius.

The S1K-M3/5AT has a low leakage current, which is typically around 1µA at room temperature, although this can be higher at higher temperatures. This makes the device suitable for applications that require a high level of stability and good static response characteristics.

The S1K-M3/5AT is designed with a soft recovery characteristic, which helps to reduce conductance losses when the device is switched off, which can help to reduce the required input current. This is usually achieved via the device’s reverse recovery time, which is typically around 150ns, although this can vary depending on the junction temperature.

In addition to the benefits mentioned above, the S1K-M3/5AT is designed with a variety of safety features, such as internal over-voltage protection and thermal current limitation.

The S1K-M3/5AT is a generally robust device, making it suitable for most general-purpose applications. For example, the device can be used in lighting control systems, switchmode power supplies, AC motors, and many other applications where a high blocking voltage is required.

When using the S1K-M3/5AT, it is important to make sure that it is mounted correctly to ensure good heat dissipation. Failure to do this can lead to the device overheating, reducing its useful life.

In summary, the S1K-M3/5AT is a single-phase silicon rectifier diode with a max blocking voltage of up to 1000V (1KV). This device is commonly used in applications such as switching, lighting control, and power conditioning applications, as it offers a high blocking voltage, low forward voltage drop, low leakage current, and a soft recovery characteristic. It is also designed with a variety of safety features, making it suitable for most general-purpose applications.

The specific data is subject to PDF, and the above content is for reference

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