S1M-13 Allicdata Electronics

S1M-13 Discrete Semiconductor Products

Allicdata Part #:

S1MDITR-ND

Manufacturer Part#:

S1M-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 1KV 1A SMA
More Detail: Diode Standard 1000V 1A Surface Mount SMA
DataSheet: S1M-13 datasheetS1M-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: S1M
Description

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Introduction

S1M-13 is part of the S1M-series diodes or rectifiers. Providing an ideal solution to low profile applications, it offers a broad range of forward current, low leakage, and low reverse recovery time. The series was developed to meet the demand of a growing number of electronic devices with small PCB space, such as LED lighting and LED display.

Application fields

S1M-13 is primarily used for rectification in lighting industries. It is well suited for applications that require ultra-low forward voltage drop and low power dissipation, such as LED lights and LED displays. Due to its low leakage and high forward current, it is also suitable for low-profile consumer electronics, telecom radios, test purposes, and high-efficiency rectification purposes. Furthermore, its fast turn-on and low reverse recovery time make it a perfect choice for high efficiency applications.

Working Principle

S1M-13 works just like other single rectifiers; it allows current to flow in one direction only and blocks current from flowing in the opposite direction. It contains two PN junctions, one P-type semiconductor and one N-type semiconductor. The rectifier begins to conduct and allows for current flow when the forward voltage across it is greater than the forward voltage drop of the diode, which is determined by its built-in barrier potential. The current passing through the diode is inversely proportional to its junction capacitance, which increases with increasing temperature. To reduce the reverse recovery time, the diode must dispose of the stored charge quickly. This can be done by sinking the stored charge into a sink or a capacitor, or by providing a second diode to scramble the stored charge.

Conclusion

S1M-13 is a small, low-profile rectifier with high forward current and low reverse recovery time. It is suitable for low-profile consumer electronics, telecom radios, test purposes, and high-efficiency rectification applications. The PN junctions of S1M-13 allow current to flow in one direction and blocks current from flowing in the opposite direction. Moreover, its fast turn-on and low reverse recovery time make it a perfect choice for high efficiency applications.

The specific data is subject to PDF, and the above content is for reference

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