S25FL064LABMFA000

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Memory is a necessary component in everyday devices that allows for storing vital information and performing necessary tasks. The S25FL064LABMFA000 is a high-performance Flash memory device specifically made for use in applications that require sustained optimal performance. It contains a 64Mbit memory array that offers read/write speeds similar to that of static RAM, but offers the non-volatile properties of Flash memory.

The S25FL064LABMFA000 memory device is designed for use in portable and stationary applications, including digital imaging, networking, audio, video, gaming and automotive embedded applications. Its small size allows it to be used in even the most space-limited applications with ease. Its application fields range from embedded control solutions, wireless and cellular applications, and commercial set-top boxes to storage and security consoles.

The S25FL064LABMFA000 contains a 64Mb (million bit) array of non-volatile memory cells organized into 1 Million physical pages, with each page having a capacity of 64-bytes. It allows for low-power read/write operations, which is a key feature of the memory device.

The main working principle of the S25FL064LABMFA000 is based upon the principles of Flash Technology. Flash memory is a type of non-volatile “electrically-erasable programmable read-only memory“ (EEPROM), which means that it stores its data regardless of the power being supplied and can be erased and reprogrammed. The S25FL064LABMFA000 contains a charge pump built into the device which provides the necessary programming and erasing voltage to program, erase, and read the data from the memory cells.

When performing a read operation, the memory device works by having the data stored in the Flash array selected by logic circuitry and then transferred through the charge pump in the device to produce the necessary voltage for reading. When writing to the device, the necessary voltage is produced by the charge pump and applied to the memory array and a write cycle is initiated. Once the write cycle is completed, the data is stored in the array and the write operation is completed.

The S25FL064LABMFA000 is capable of delivering maximum throughput speeds up to 60 mb/s. It has an average read time of less than 0.2ms and a max write time of 12ms. Its low-power consumption makes it an ideal memory device for a variety of applications where power consumption is a concern. Additionally, its wide operating temperature range (-25°C to +70°C) makes it suitable for use in harsh outdoor environments.

The S25FL064LABMFA000 memory device has been designed and tested to meet today’s demanding requirements for performance and reliability. With its advanced memory array and high-performance charging motor, it can provide the necessary speed and storage required in a variety of applications. Its compatibility with Flash technology and its wide operating temperature range give it the capabilities to be used in a variety of industrial and consumer environments. It is a great solution for applications that require sustained optimal performance while minimizing power consumption.

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