S25FL064LABNFI040

Memory: S25FL064LABNFI040 Application Field and Working Principle

The S25FL064LABNFI040 is a 8 Gb, 3V Single Voltage Flash Memory from the S25FL family, which is an industry leader in non-volatile memory and features a wide operating range and a wide voltage range for read and write operation in industrial applications.

The memory is also known as a 3V single voltage NOR flash with advanced features, which makes it suitable for many industrial applications such as automotive, mobile, telecom systems, etc. The memory has a low idle current, offers read and write protection, and is available in packages of 4 Kbits and 8 Kbits, allowing for flexibility and scalability. The memory also has a built-in error-correcting-code (ECC).

Application Field

The S25FL064LABNFI040 is a perfect choice for embedded system applications due to its low voltage operation, low power consumption, wide variety of features and scalability. This memory can be used in various applications like automotive and telecom systems, medical equipment, automation, gaming and consumer applications. The S25FL chip is designed to be used in space constrained applications and is offered in several packages including LGA, DIP, TSOP, WLFBGA and WLCSP. It can also be used in various industrial, networking, and telecom applications.

Working Principle

The S25FL064LABNFI040 utilizes a floating gate memory cell technology which is commonly found in other single-voltage NOR flash memory chips. The chip is organized as an array of memory cells distributed in blocks of 4Kbytes. Each cell is constructed by connecting a floating gate to one N-channel conductive gate of an MOS structure. Each cell is connected to individual bit lines and selected by a word line. Data can be read directly from the cell by the process of Fowler Nordheim tunneling. When the floating gate of the memory cell is programmed, a high voltage is applied to the control gate, which ionizes the electrons in the floating gate and creates a conducting path. When the cell is erased, a high voltage is applied to the floating gate and electrons are swept away.

The S25FL064LABNFI040 can also be programmed using the command set of the Standard Serial Flash Memory Co-Processor, or SSFDC. This is a dedicated protocol and command set designed specifically to manage the various memory operations. It can be used for programming and erasing the memory, as well as for reading and writing data. The chip also has a built-in error-correcting-code (ECC) which can detect and correct errors in the data.

The S25FL064LABNFI040 is a reliable and high-performance memory chip which is suitable for a wide range of applications. It is designed for industrial applications and has wide voltage and operating range compatibility, low power consumption and a built-in ECC. The chip is offered in multiple packages and can be used in space-constrained applications. It can also be programmed via the SSFDC command set. With its advanced features and wide range of compatibility, the S25FL064LABNFI040 is a perfect choice for industrial applications.