S25FL064P0XMFI003M Allicdata Electronics
Allicdata Part #:

S25FL064P0XMFI003M-ND

Manufacturer Part#:

S25FL064P0XMFI003M

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 64M SPI 104MHZ
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O...
DataSheet: S25FL064P0XMFI003M datasheetS25FL064P0XMFI003M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: FL-P
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Introduction

The S25FL064P0XMFI003M is a very popular and cost-effective memory chip. It offers a wide range of features, such as fast write speed, low power consumption and high-capacity. The chip has been widely used in a number of different applications, including mobile devices, digital cameras, and even military devices.

Application Field

The S25FL064P0XMFI003M is a great choice for storage applications. It offers 7.9 GB/s of capacity, meaning that it can easily hold more data than other comparable chips. Furthermore, its 3.3 V power supply and low power consumption make it ideal for mobile devices.The chip is also suitable for industrial applications, as it offers a fast reading and writing speed and a high resistance to corrosion. This makes it perfect for use in military and aerospace applications. Additionally, it has been designed to operate at temperatures up to 125°C, making it suitable for use in harsh environments.

Working Principle

The S25FL064P0XMFI003M is a standard flash memory chip, meaning that it stores data using an array of memory cells. Each cell contains two transistors, with one of them controlling the flow of electrons between the source and drain. When writing data to the cell, an electrical charge is applied to the control transistor, which causes it to change its state. When the cell is read, the control transistor voltage is measured, which allows the chip to determine the state of the cell. The chip is designed to work in harmony with its connected devices and is optimized for high speed operations. It has a fastrandom access read time of 70 ns and a fast sequential read time of 50 ns. This means that the chip can read and write data quickly, allowing it to keep up with the demands of the connected device.

Conclusion

The S25FL064P0XMFI003M is a versatile and cost-effective memory chip. It offers a high capacity, a high speed of operation and a low power consumption, making it ideal for use in a wide variety of applications, including mobile devices and industrial applications. On top of that, it has a fast read and write speed and a high resistance to corrosion, making it suitable for use in extreme conditions.

The specific data is subject to PDF, and the above content is for reference

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