Allicdata Part #: | S25FL064P0XMFV001M-ND |
Manufacturer Part#: |
S25FL064P0XMFV001M |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 64M SPI 104MHZ |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O... |
DataSheet: | S25FL064P0XMFV001M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FL-P |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 5µs, 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
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S25FL064P0XMFV001M is a type of memory chip used in a wide range of applications, from personal computers and embedded systems, to telecommunications, industrial control and many other areas. The memory chip can store a range of data, including code, program instructions, and images. It uses a technology called Flash memory, which is a form of non-volatile RAM (random access memory). This means that the data is stored even when no power is applied. This makes it suitable for applications which require the storage of important information without the need for constant power.
Flash memory is an interesting concept which combines the writing speed and non-volatility of RAM with the read speeds and endurance of solid-state memory. Traditional RAM needs a constant power supply to read and write data. It can be written and read quickly, but the data is erased when the power is lost. Solid-state memory, such as ROM, is read-only and much slower, but it retains the data even when power is removed. Flash memory combines these two technologies by using an array of ‘cells’, each with a single transistor and a capacitor. The memory is written, or ‘programmed’, by applying a high voltage to each cell, causing the transistor to switch and form the bridge to the charge of the capacitor. To read a cell, the voltage is lowered and the current flow is measured by the circuit to determine whether or not the transistor is in the ‘on’ or ‘off’ state. By programming a range of cells in this manner, the memory can retain and access different types of data.
S25FL064P0XMFV001M is a state-of-the-art flash memory device. It is designed for high-speed operation, allowing up to 4.45MB/s read and 1.46MB/s write speeds respectively. Its power-efficient design also reduces power consumption by up to 40% over earlier models. It has a very robust built-in error correction, and also has built-in timeout and write protection circuits. These features make it suitable for a wide range of applications, where high speeds and reliability are essential.
S25FL064P0XMFV001M is used in a range of applications, from portable data storage and digital media devices to military and aerospace products. It can be found in the most modern personal computers, tablets, and smartphones. It is an ideal choice for applications that require reliable and resilient data storage, such as embedded systems, or that need to store large amounts of data quickly and without constant power, such as telecommunications.
In summary, S25FL064P0XMFV001M is a state-of-the-art flash memory device that combines the fast read and write speeds of RAM with the non-volatility and endurance of ROM. Its reliability, speed and power-efficiency make it suitable for both consumer and industrial applications. It is used to store data in a wide range of products, including personal computers, smartphones, tablets and other embedded systems.
The specific data is subject to PDF, and the above content is for reference
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