Allicdata Part #: | S25FL116K0XMFIS13-ND |
Manufacturer Part#: |
S25FL116K0XMFIS13 |
Price: | $ 0.32 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 16MBIT 108MHZ 8SOIC |
More Detail: | FLASH - NOR Memory IC 16Mb (2M x 8) SPI - Quad I/O... |
DataSheet: | S25FL116K0XMFIS13 Datasheet/PDF |
Quantity: | 1000 |
2100 +: | $ 0.28412 |
Series: | FL1-K |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 16Mb (2M x 8) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
Supplier Device Package: | 8-SO |
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Memory
S25FL116K0XMFIS13 is a kind of flash memory from Cypress Semiconductor (previously owned by Spansion), which is of great application field and good working principle. It is mainly applied as secondary storage in embedded systems such as system-on-chip (SOC), digital signal processing (DSP), and digital media processor (DMP) products. The S25FL116K0XMFIS13 flash memory packs 1GB of high-density non-volatile data storage into an 8-pin ultra-small 6mm x 8mm package, providing a reliable and cost-effective flash memory solution.
The working principle of S25FL116K0XMFIS13 flash memory is based on two distinct RAMs, known as SRAM and DRAM. SRAM stores the data in a register; DRAM stores the data in cells that are organized in a grid format. The data is written to the DRAM cells using a special electrical pulse which is then retained until a new write pulse is sent. The data stored in the DRAM cells is then transferred to a register and the exact contents of the register are then transferred to the SRAM. This process is repeated for each write operation and for each read operation. When the data is written to the SRAM, it is instantly available for use.
S25FL116K0XMFIS13 also has advanced features that make it suitable for use in embedded and digital media applications. The device has a master-slave mode (MSM) that allows multiple slave devices to be connected to and controlled by a single master device. The device also has command support that allows programming, erasing and reading data. The number of read and write cycles is also up to 100,000, which is quite high compared to other memories.
Moreover, S25FL116K0XMFIS13 also has an 8-bit wide interface that supports 3.3V and 5V operation. There are three types of packages available, namely the 8 pin TDFN, the 8 pin WDFN and the 8 pin WLFBGA. The advantage of these packages is that they provide increased electrical impedance characteristics and improved signal integrity.
In conclusion, S25FL116K0XMFIS13 is a highly reliable flash memory device that combines high-density data storage with low power consumption, making it a great choice for high-performance applications. The device’s advanced features and its wide range of availability in various packages allows it to be used in a variety of embedded and portable applications.
The specific data is subject to PDF, and the above content is for reference
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