S25FL064P0XNFI000

Series:	FL-P
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	64Mb (8M x 8)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	5µs, 3ms
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON (6x8)

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IntroductionThe S25FL064P0XNFI000 is a high-performance, low-power, non-volatile Flash memory device. It is a high density, cost-sensitive NAND memory solution utilizing a 64 megabit single-bit-level Flash memory array with a maximum density of 32GB. This memory device offers cost-effective, integrated and low-power data storage capabilities for use in many different applications.ApplicationsThe S25FL064P0XNFI000 is well suited for use in embedded design applications. It can be used in portable products such as PDAs, MP3 players and cameras, but is also suitable for a variety of automotive, military and industrial applications. This memory device is available in a wide range of densities and voltages, which allow it to be used for a variety of design requirements.In addition, the S25FL064P0XNFI000 can be used to store large files such as those related to audio, video, text and graphics and to provide very rapid random access to large amounts of data. The device is also capable of executing code held in its memory array thus allowing it to be used in embedded systems like automotive, industrial and military designs.Operating CharacteristicsThe S25FL064P0XNFI000 memory device has several operating characteristics, which make it useful for many different applications. These include very low power consumption, operation voltage of between 1.8V and 5.5V, fast random read and write speeds, sequential and random access modes, error correction capability and protection from various environmental elements such as dust and water.The S25FL064P0XNFI000 also has a built-in error correction code (ECC) to protect data integrity and reduce the probability of data corruption. The device is also compatible with major retail store and software companies’ programming and recovery software, allowing it to be used in a wide range of applications. Working PrincipleThe S25FL064P0XNFI000 works by utilizing a single-bit NAND flash memory array and an advanced error correction algorithm. At its core, the device is made up of circuits, transistors and other components that can convert electrical signals into data, store data and transfer data in and out of the device. To store, a voltage of either 1.8V or 2.7V is applied to the memory cells, which cause them to store 1s and 0s. When the voltage is pulled back down to 0V, the device retains that data until the voltage is again applied to the devices memory cells, which causes it to be read or written to. The advanced error correction algorithm is used to verify data accuracy during both reading and writing operations. The ECC algorithm works by comparing the data written to the device with a reference version of it and then correcting any errors that may arise. This ensures that the data remains reliable and that the data written to the device is not corrupted. ConclusionThe S25FL064P0XNFI000 is a cost-effective, integrated and low-power data storage NAND memory device that is suitable for use in many embedded design applications. It operates at between 1.8V and 5.5V and has a built-in error correction code that protects data integrity by correcting any errors that may arise. It also has the ability to execute code stored in its memory array and is compatible with major retail store and software companies’ programming and recovery software, providing flexibility and versatility to its users.

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