S25FL064P0XNFI003 Integrated Circuits (ICs) |
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Allicdata Part #: | 428-3816-2-ND |
Manufacturer Part#: |
S25FL064P0XNFI003 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 64M SPI 104MHZ 8WSON |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O... |
DataSheet: | S25FL064P0XNFI003 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FL-P |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 5µs, 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-WSON (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
S25FL064P0XNFI003 is a nonvolatile memory product from Cypress Semiconductor, and it belongs to a family of Split Gate Flash devices. This product offers both high performance and small footprint, making it ideal for a variety of applications. The device is designed to store and retrieve large amounts of data quickly and reliably.
The S25FL064P0XNFI003 offers a wide range of applications. It is suitable for a variety of industrial and consumer applications, including automotive, telecom, consumer electronics, industrial automation, medical, and datacenter applications. It is also suitable for the aerospace and defense industries, as well as applications where space savings is critical.
The S25FL064P0XNFI003 is an NOR Flash memory device that offers a high density of 64-bit wide data, as well as a very fast read and write capability. The device is also capable of storing up to 4 Gbytes of data. The device is available in both PLCC and BGA packages, making it ideal for applications where space is limited.
The working principle of the S25FL064P0XNFI003 is based on charge-transfer technology. When data is written to the device, a charge is transferred from a gate-oxide layer to a floating gate. The data is stored when the charge is trapped within the gate field. When data is read from the device, the charge is transferred from the floating gate to the control gate, allowing the data to be read out.
The S25FL064P0XNFI003 also offers a variety of programming and erasing features. These features include sector erase, block erase, and chip erase, as well as erase suspend and write suspend. The device also offers fast program and erase cycle times, making it suitable for high speed applications. Additionally, the S25FL064P0XNFI003 also offers dynamic power scaling and program/erase acceleration.
Overall, the S25FL064P0XNFI003 is a reliable and versatile nonvolatile memory device that is well-suited for a variety of applications. Its high density, fast read and write capabilities, and a variety of program and erase features make it an ideal choice for applications that require a high level of performance. Additionally, its small form factor makes it an ideal choice for applications where space savings is critical.
The specific data is subject to PDF, and the above content is for reference
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