S25FL116K0XMFI043

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Flash memory has become an essential part of modern computing. It is used everywhere in our electronic devices, and its performance determines the speed of the device. The S25FL116K0XMFI043 is a highly efficient Flash memory solution that offers the best performance and reliability for demanding applications. This article will discuss the application field and working principle of the S25FL116K0XMFI043.

Overview of S25FL116K0XMFI043 Flash Memory

The S25FL116K0XMFI043 is a multi-level cell NOR Flash memory that offers highly efficient data storage. It provides 16 gigabit of data storage with up to 16.7 million pages of memory. The device supports both x8 and x16 parallel operation, allowing for transfer rates up to 185 MHz. The S25FL116K0XMFI043 also has an advanced power architecture design that optimizes power consumption, making it the ideal choice for battery-powered applications. The device supports support multiple protocol interfaces, including SPI, DPI, and DFI.

Application Field of S25FL116K0XMFI043

The S25FL116K0XMFI043 Flash memory has a wide range of applications. It is used in a variety of industrial, commercial and consumer applications, including industrial control systems, automotive entertainment systems, digital audio/video players, navigation systems, IoT hubs, mobile gaming devices, and mobile phones. It is particularly suited to applications that require high performance, reliability, and low power consumption. It is well suited for high speed internet of things (IoT) applications, such as home automation and connected appliances.

Working Principle

The S25FL116K0XMFI043 Flash memory is based on a NOR flash cell architecture. The memory cell consists of two transistors, one of which functions as a control gate and the other as a floating gate. During a write process, a write voltage is applied to the control gate, which causes electrons to travel from the source to the floating gate. This creates an electric field between the gate and the floating gate, which stores the data in the cell. During a read process, the electric field can be measured, allowing the cell to be read. The device also supports error correction, write prevention, and sector protection features, further enhancing the reliability of the device.

Conclusion

The S25FL116K0XMFI043 Flash memory is a highly efficient, power-optimized Flash memory solution that provides the best performance and reliability for demanding applications. It is suitable for a wide range of applications, including industrial, commercial and consumer applications, and is ideal for high speed internet of things applications. Additionally, the working principle of the Flash memory is based on a NOR flash cell architecture, which provides excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference