S25FL116K0XNFI011

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Memory is one of the most important components of any computer or electronic device. The S25FL116K0XNFI011 is an advanced high density, low voltage, Flash Memory that is ideal for a wide range of applications. It boasts a high write/erase performance and features a number of enhanced features such as low power operation and enhanced endurance.

The S25FL116K0XNFI011 is a new generation of Flash memory specifically designed for mobile and consumer devices. It uses three-bit per cell-NAND Flash Memory Technology to provide a high level of data capacity and reliability. This advanced Flash memory delivers enhanced read, write and program performance and is suitable for a variety of embedded applications. It features a 1.8V operation voltage, Toggle and ONFI standard interfaces, a wide range of clock frequencies, and an external pin count of 66.

The S25FL116K0XNFI011 is suitable for use in a number of applications including smartphones, tablets, storage devices, and embedded systems. It provides high-density storage in a very small physical package, making it an ideal choice for many applications. The Flash memory also features enhanced reliability and advanced durability, making it suitable for a number of different environments and applications. It also features a high level of secure erase capability and secure programming features.

The S25FL116K0XNFI011 is designed for a variety of applications, including automotive, automotive infotainment, consumer electronics, communications, and industrial applications. It is suitable for use in many different environments, including automotive, industrial, temperature, and shock vibration. The Flash memory is also suitable for use in a number of different data storage operations, including streaming and broadcast media.

The S25FL116K0XNFI011 delivers reliable and efficient read operations with a maximum clock frequency of 208MHz. It can read data at a maximum speed of 83MB/s using an 8-bit bus and a maximum speed of 50MB/s using a 4-bit bus. It is designed for high-speed write operations, with the maximum write performance of 133MB/s for 8-bit bus and 82MB/s for 4-bit bus. It has a minimum write cycle time of 16µs and a minimal erase cycle time of 12µs.

The S25FL116K0XNFI011 supports a comprehensive range of features, including advanced data protection, error correction, real-time programming, and ultra-high endurance. The Flash memory also features a single-level cell architecture, which ensures that data is reliably stored without damaging the cells. It has a wide operating temperature range of -40°C to +85°C and is available in a number of packages.

The S25FL116K0XNFI011 is an advanced memory solution that offers the highest performance, lowest power consumption and enhanced reliability in a versatile package. Its innovative design and advanced features make it suitable for a wide range of applications including mobile devices, automotive, data storage and industrial applications. With its high levels of read, write and erase performance, this high-performance Flash memory is an ideal choice for a range of embedded applications.

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