S25FL128LAGBHB033 Allicdata Electronics
Allicdata Part #:

S25FL128LAGBHB033-ND

Manufacturer Part#:

S25FL128LAGBHB033

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M SPI 133MHZ 24BGA
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I...
DataSheet: S25FL128LAGBHB033 datasheetS25FL128LAGBHB033 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100, FL-L
Part Status: Preliminary
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI - Quad I/O, QPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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Memory

S25FL128LAGBHB033 is a type of memory device which is widely used in many industrial and consumer grade applications. It is a 128MB (1GB) non-volatile memory device manufactured by Samsung Semiconductor, Inc.

Applications

The device is commonly used in consumer electronics such as USB thumb drives, video game systems, MP3 players and digital cameras. It is also often used for data storage in industrial applications where data must be saved for long periods of time, such as machine-to-machine communication and automation systems. Additionally, the device is also frequently used in aerospace and automobile applications.

Working Principle

The 128MB S25FL128LAGBHB033 memory device works by storing information on an array of flash memory cells. These cells are arranged in an orderly pattern and each cell can store a single bit of information. Each cell contains two transistors which act as an electrical switch, allowing the cell to be activated or deactivated, thereby setting the bit to either a ‘1’ or a ‘0’. The entire array is powered by a single voltage supply.

Each cell of the memory device is able to rewrite its bit without the need to erase the entire array. This is possible due to the use of specific electrical states which are used to define a ‘1’ or a ‘0’. When the bit is to be rewritten, the electrical state of the cell is changed, but the existing contents remain intact to allow for efficient memory updating, a key feature in many industrial applications.

Advantages

The 128MB S25FL128LAGBHB033 memory device has a number of advantages over other types of memory devices. Firstly, its non-volatile nature means that it does not require a source of power in order to retain data. This makes it particularly suitable for applications which must store data without interruption, and it also greatly simplifies the design of aerospace and automobile applications, as the presence of a bog-standard power-supply is not required.

The device is also fast acting, allowing data to be written and read in a matter of microseconds, making it suitable for complex data acquisition applications. Additionally, the fact that data can be written and read without erasing all the existing data is also a significant advantage, as this enables quick and efficient memory updating without the need to erase the entire array.

Conclusion

Overall, the 128MB S25FL128LAGBHB033 memory device is an extremely versatile and reliable memory device, with a wide range of applications and advantages over other Types of memory devices. It is suitable for use in both consumer electronics and industrial applications, and its fast acting and non-volatile nature make it particularly well suited for use in aerospace and automobile applications.

The specific data is subject to PDF, and the above content is for reference

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