Allicdata Part #: | S25FL128LAGMFB001-ND |
Manufacturer Part#: |
S25FL128LAGMFB001 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M SPI 133MHZ 16SOIC |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I... |
DataSheet: | S25FL128LAGMFB001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q100, FL-L |
Part Status: | Preliminary |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 133MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI - Quad I/O, QPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
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S25FL128LAGMFB001 Memory Application Field and Working Principle
The S25FL128LAGMFB001 is a high-performance serial (SPI) NOR flash memory product that stores information and provides reliable data storage in a wide array of applications. It comes in a variety of package types and pin configurations, making it ideal for a variety of applications where non-volatile memory storage is needed. As such, it has become one of the most widely used flash memory solutions in the market today.
Application Fields
The S25FL128LAGMFB001 Flash Memory can be used in many applications, including but not limited to:
- Automotive infotainment systems
- Industrial networks
- General embedded systems
- Consumer electronic applications
- Storage devices
- Networking solutions
The S25FL128LAGMFB001 supports a wide range of temperature operating conditions, making it suitable for use in extreme environments. It also supports a wide range of programming, erase, and endurance frequencies as well as a tight timing and power-down cycle, making it ideal for powering up and powering down systems.
Working Principle
The working principle of the S25FL128LAGMFB001 memory is based on flash memory architecture, which is composed of a large number of transistors, arranged as cells. Each cell is divided into "pages" that can store data. Each page consists of stacked transistors and capacitor, which is required to store data when the power is switched off, allowing for non-volatile storage.
When an operation is to be performed on the memory, such as reading, writing or erasing, the relevant address is applied to the memory. This address is used to select and activate the relevant memory cells to read, write, or erase data in the memory. Once the operation is complete the cells are deactivated again.
The S25FL128LAGMFB001 offers high-speed operation, with read speeds of up to 100MHz or higher, depending on model, making it ideal for applications which require fast and reliable transfer of data.
The S25FL128LAGMFB001 offers a wide range of features and options, making it suitable for a wide range of applications and use cases. It is a reliable and cost-effective solution that makes it an attractive choice for users seeking a high-performance, low-cost memory solution.
The specific data is subject to PDF, and the above content is for reference
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