S25FL128LAGMFI001 Datasheet/PDFMemory
The S25FL128LAGMFI001 is a member of the 3 V flash family of memory products manufactured by Cypress Semiconductor. It is an 128-Mbit, non-volatile, programmable memory and is available in two packages: a thin Triple-Leaded Plastic Small Outline Package (TSOP) and a 24-pin TileFlex package. This device has a 66 MHz Clock signal and a 32-bit data bus.
The S25FL128LAGMFI001 is ideal for applications that require large amounts of data storage, such as industrial control systems, medical devices, cellular phone base stations, and avionics. It is designed to provide high bandwidth and fast read/write operations. It has advanced features such as low-power suspend, page-size program, page-to-page erase, and absolute address read. The device is also resistant to shock and vibration, making it suitable for use in demanding environments.
Application Field
The S25FL128LAGMFI001 device is ideal for a wide range of applications. These include industrial control systems, medical devices, cellular phone base stations, and avionics. The device offers fast read/write operations and supports two memory planes, allowing simultaneous read/write access to both planes in the same clock cycle. This is ideal for applications that require reliable, high-performance data storage.
The device also provides a low-power suspend feature that allows the device to enter a low-power state when idle, reducing power consumption and extending battery life in mobile applications. The S25FL128LAGMFI001 also features a page-size program, allowing data to be programmed into 256-byte pages, as opposed to the usual block programming. This makes it easier to update only a portion of a large data set, saving time and memory.
Working Principle
The S25FL128LAGMFI001 is a non-volatile device. This means that it retains its stored data even when the power is turned off. The device uses a floating grid structure to store data, which is based on the movement of electrons through a matrix of electrically charged nodes. The electrons move through the nodes in predetermined “channels” that are programmed at the time of manufacturing.
The data is written to the device through a “write” operation. This is achieved by applying a high voltage to a floating gate, which causes a large number of electrons to be transferred from the source to the drain. These electrons then accumulate in the floating gate and create a node that stores the data.
The data is read from the device through a “read” operation. This is achieved by applying an appropriate voltage to the floating gate, which causes the electrons in the gate to move to the drain. The current that is generated at the drain is then measured and compared with a reference level to determine the value stored in the gate.
The S25FL128LAGMFI001 also has a few advanced features. These include page-to-page erase and absolute address read, which allow the device to switch between pages of data without erasing the entire device. This can help to extend the life of the device, as it reduces the number of times that the device needs to be erased and reprogrammed.
The S25FL128LAGMFI001 is an advanced memory device that is suitable for a variety of demanding applications.