S25FL128LAGNFB011

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There are a variety of memory components available for use in the construction of digital systems, and these include the S25FL128LAGNFB011 model. This particular device is a Serial Flash memory component, and it is designed and manufactured with advanced, state-of-the-art technology.

The S25FL128LAGNFB011 model is a non-volatile memory component, and it exhibits excellent reliability and performance. It is designed to function effectively in many different application fields, such as automotive and industrial applications, as well as consumer electronics and telecommunication systems and networks.

This device is constructed with a range of powerful and sophisticated features and applications, and these include the following:

• High Capacity - The S25FL128LAGNFB011 can hold a large amount of data. It has a capacity of 128Mb, which is 16MB.
• Wide Range of Operating Conditions - This device can function effectively when exposed to a wide range of operating conditions. It is designed to operate in temperatures ranging from -40°C to +125°C.
• Erase and Program Suspend Feature - This device is able to erase and program suspend. This means that if the erase or programming operation was interrupted, the memory device is able to resume the operation from the exact point of interruption.

Aside from these features, the S25FL128LAGNFB011 also allows for fast read and write operations. It exhibits a read speed of up to 45 Mbps, and an write speed of up to 12 Mbps.

The S25FL128LAGNFB011 also contain an enhanced Security ID (E-SID) feature, which enables this device to fight against piracy and unauthorized access.

As far as the working principle of this device is concerned, the S25FL128LAGNFB011 uses the single polycrystalline semiconductor technology. This technology uses transistors to form a memory cell, and the memory cell is capable of storing a single bit of data. The data is stored in a thin film that is sandwiched between two plates of polycrystalline material, which is connected to two terminals.

When the cell is powered, a charge is formed on one layer and the other layer acts as the source of electrons. If the voltage on one layer is higher than the other, a channel is formed, allowing the electrons to flow from one layer to the other. By manipulating the voltage levels, the direction of the current can be detected, which allows the memory cell to store data as either a 0 or a 1.

In conclusion, the S25FL128LAGNFB011 is a powerful and reliable Serial Flash device. It is designed to efficiently and effectively store and access large amounts of data in many different application fields. It is constructed with a single polycrystalline semiconductor technology, which allows it to store and manipulate data with ease.

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