S25FL128P0XNFI011M

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S25FL128P0XNFI011M is a high-density serial NOR Flash memory, typically used for code storage, non-volatile data storage, and parameter storage applications. It is ideal for embedded systems that require large area code storage and fast read operations. The device features a 3V peak operation voltage range and a read access time of 70ns.

Overview

The S25FL128P0XNFI011M memory is a 128Mb NOR Flash semiconductor memory with a SPI-compatible multiple IO interface. It is organized as 8,191 erase blocks with 256 bytes per block. With a flexible architecture and high bandwidth, up to 150MHz clock rate, the S25FL128P0XNFI011M memory can easily store code, parameters, and large amounts of data.

The most attractive feature of the S25FL128P0XNFI011M memory is its high reliability. It utilizes Enhanced Supervised Write (ESW) technology, which provides secure write protection and an advanced error correction mechanism to ensure data is accurately stored and protected. It also boasts a read disturbance robustness (RDR) feature which prevents data corruption as a result of read errors.

Applications

The S25FL128P0XNFI011M is a highly flexible memory device suitable for a variety of applications. It is widely used in portable digital devices, industrial control systems, automotive electronics, communications systems and storage devices. It can be used to store code and programs, non-volatile data, and system parameters.

The S25FL128P0XNFI011M has been used in various applications including medical diagnostic equipment, medical imaging systems, security systems, portable gaming machines, point-of-sale kiosks, machine vision systems, and Internet of Things (IoT) products. It is also widely used in networking, military and aerospace applications.

Working Principle

The working principle of the S25FL128P0XNFI011M involves several steps in order to write, read and erase data from memory. The first step is to activate the memory by providing an appropriate control command or voltage to the device. This step allows the device to access its internal data registers, allowing further instructions to be issued.

The next step is to issue a read or write command. Depending on the command, the device either reads the data from memory or stores new data. During the writing process, the ESW technology controls the write process and performs additional error checking and correction steps. The same process applies to the reading step, as the RDR feature helps to protect and preserve data integrity.

Finally, an erase command can be issued to erase a block or the entire device. The S25FL128P0XNFI011M utilizes a 3.3V Bulk Erase feature, which allows the chip to be erased quickly and efficiently. A single power cycle will erase all stored data from memory, allowing the chip to be reprogrammed with fresh data.

Conclusion

Overall, the S25FL128P0XNFI011M is a powerful, reliable and flexible NOR Flash memory device. It suits a wide range of applications due to its high density, fast access time, enhanced write and read protection, and 3V operation. With its robust and reliable architecture, the S25FL128P0XNFI011M memory is an ideal choice for high-capacity storage, parameter storage and code storage applications.

The specific data is subject to PDF, and the above content is for reference