Allicdata Part #: | S25FL129P0XBHI313-ND |
Manufacturer Part#: |
S25FL129P0XBHI313 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 128M SPI 104MHZ 24BGA |
More Detail: | FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I... |
DataSheet: | S25FL129P0XBHI313 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FL-P |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 5µs, 3ms |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-BGA (6x8) |
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Memory is a core element of any electronic device. It is used to store data and instructions so that they can be quickly accessed by the processor. One memory device that has become increasingly popular in electronic circuits is the S25FL129P0XBHI313 Flash Memory. This device is capable of offering higher densities with smaller footprints, and better performance for a range of applications.
The S25FL129P0XBHI313 Flash Memory is a Single Level Cell (SLC) NAND Flash memory device that provides high-density, cost-effective, reliable, and high-speed data storage in small package sizes. It is based on serial NAND Flash memory technology and features advanced NAND Flash controller techniques, enabling access to large amounts of data quickly and efficiently. This device is available in a number of densities ranging from 64 Megabit (Mb) to 512Mb.
The S25FL129P0XBHI313 is suitable for a wide range of applications, including mobile phones, portable media players, digital cameras, LCDs, PDAs, electronic gaming systems, and embedded systems. Its small package footprint and wide operating temperature range make it ideal for system designs with space-constrained applications.
The working principle of the S25FL129P0XBHI313 Flash Memory is based on NAND Flash technology. NAND technology utilizes a series of floating gate transistors that are interconnected and programmed to store data. In NAND Flash memories, each cell is randomly accessed, allowing the data to be stored, erased, and read at extremely high speeds. These cells can be programmed in blocks and pages, making them an ideal flash memory for applications that require high data throughput.
The S25FL129P0XBHI313 Flash Memory has an advanced ECC algorithm that can detect and correct up to 96-bit data errors. This ensures reliable data storage and retrieval. It also features Error Correction Code (ECC) functionality that other NAND Flash memories may lack. This additional security feature makes it ideal for use in applications where data integrity is critical.
The S25FL129P0XBHI313 Flash Memory also has a number of other features, including write and read protection, wear leveling, and low power consumption. These features make the device an ideal solution for a variety of applications. These include embedded systems, video game consoles, and mobile devices.
The S25FL129P0XBHI313 Flash Memory is a reliable, high-performance memory device that is suitable for a wide range of applications. It provides high-density storage in a small package size, advanced NAND Flash controller techniques, and features such as error correction and write/read protection. This makes the S25FL129P0XBHI313 an ideal solution for many applications, ranging from embedded systems to mobile devices.
The specific data is subject to PDF, and the above content is for reference
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