S25FL129P0XBHIY10

S25FL129P0XBHIY10 is a multi-I/O interface Flash memory IC from Cypress Semiconductor Corporation that is often used in the fields of IoT, portable devices, and smart cards. The products features low power consumption, small package size, and a wide array of features to make it an excellent choice for portable device memory storage. In this article, we will discuss the properties and applications of S25FL129P0XBHIY10 and its working principle.

Properties of S25FL129P0XBHIY10

The S25FL129P0XBHIY10 is a SONOS-type (floating gate) memory IC that is offered in a small 8-pin package, making it ideal for applications such as IoT, portable devices, and smart cards. The IC is organized as 16,384 pages of 256 by 16 bits each, equipped with a page buffer of 8 kB.

In terms of data transfer, the IC offers a high-speed transfer rate of up to 104 Mbps using its quad peripheral data modes and double transfer rate. For write operations, the S25FL129P0XBHIY10 has an array program time of 12 μs, and an erase time of 1.6 ms. It also features a serial peripheral interface (SPI) with selectable SPI modes that includes SPI0, SPI1, and Dual-SPI.

In terms of endurance, the S25FL129P0XBHIY10 boasts a robust 1 million P/E cycles, making it suitable for wear-resistant applications that require long-term data storage. It has an impressive write endurance of 5000 (typical) and 10,000 write cycles (maximum). Other features include a deep power down (DPD) mode which reduces the standby current by 99.9%, thus enhancing the power management capabilities of the IC.

S25FL129P0XBHIY10 Applications

Thanks to its features and specifications, the S25FL129P0XBHIY10 is especially suitable for applications that require high-speed data transfer, such as embedded automotive systems, consumer and industrial embedded devices, internet of things (IoT) devices, smart meters, and medical equipment.

The IC is also well-suited for applications that require low power consumption and long-term data storage, such as mobile phones, digital TVs, multimedia devices, smart cards and passports, audio systems, and other consumer electronics products.

Working principle of S25FL129P0XBHIY10

At the core of the S25FL129P0XBHIY10 is a SONOS-type (floating gate) Flash memory cell. This type of cell is composed of two silicon nitride layers that act as a tunneling oxide and a control gate, respectively. When a voltage is applied to the tunneling oxide layer, electrons are injected into the floating gate, thus storing data in the memory cell. The floating gate is insulated from the control gate, and thus, the charge stored in the cell is prevented from leaking over time.

When a voltage is applied to the control layer, electrons are released from the floating gate and transferred to the drain source region, thus retrieving the data stored in the memory cell. The S25FL129P0XBHIY10 also uses a voltage detection circuit that senses when the internal memory cell is ready for programming or erasing, which aids in data retention and minimizes current draw.

Conclusion

The S25FL129P0XBHIY10 is a multi-I/O interface SONOS-type Flash memory IC that is widely used in IoT, portable devices, and smart cards. It features a small 8-pin package, data rates of up to 104 Mbps, and long-term data retention of up to 1 million program/erase cycles. The IC is designed for applications that require low power consumption and long-term data storage, such as mobile phones, smart cards, audio systems, and consumer electronics.

The S25FL129P0XBHIY10 features a SONOS-type Flash memory cell that uses two silicon nitride layers that act as a tunneling oxide and a control gate, respectively. When a voltage is applied to the tunneling oxide layer, electrons are injected into the floating gate, thus storing data in the memory cell. When a voltage is applied to the control gate, electrons are released from the floating gate and transferred to the drain source region, thus retrieving the data stored in the memory cell.